TITLE

Impurity-induced layer-disordered buried heterostructure AlxGa1-xAs-GaAs quantum well edge-injection laser array

AUTHOR(S)
Deppe, D. G.; Jackson, G. S.; Holonyak, N.; Hall, D. C.; Burnham, R. D.; Thornton, R. L.; Epler, J. E.; Paoli, T. L.
PUB. DATE
February 1987
SOURCE
Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p392
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A laser array is described that makes use of edge injection into two sides (two ‘‘edges’’) of a stack of three AlxGa1-xAs-GaAs multiple quantum well active regions. The edge-injection array is realized by impurity-induced layer disordering, which forms a higher gap Si-doped n-type emitter that edge injects electrons into either side of a stack of three lower gap multiple quantum well p-type active regions. The far-field beam divergence in the vertical direction (θ⊥) of the array diode is reduced from 45° to 15° as determined by the laser operation, for comparison, of one of the quantum well active regions (oxide-defined stripe geometry diode).
ACCESSION #
9822139

 

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