X-ray topography of growth striations in Czochralski-grown Si wafers

Imai, Masato; Noda, Hiroyuki; Shibata, Masahiro; Yatsurugi, Yoshifumi
February 1987
Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p395
Academic Journal
Growth striations in Czochralski-grown Si wafers have been observed by a scanning x-ray double-crystal method. We confirmed that the striations on the topographs relate to the variation of oxygen concentration.


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