Effects of 450 °C thermal annealing upon oxygen precipitation in heavily B- and Sb-doped Czochralski Si

Hahn, S.; Arst, M.; Rek, Z. U.; Stojanoff, V.; Bulla, D. A.; Castro, W. E.; Tiller, W. A.
February 1987
Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p401
Academic Journal
In this study we investigated effects of 450 °C preanneal upon oxygen precipitation during subsequent low (700 °C)-medium (950 °C) temperature two-step furnace anneals in heavily B- and Sb-doped Czochralski Si wafers. Our optical microscopy and synchrotron radiation section topographic data have shown that, for heavily B-doped materials, a 450 °C anneal up to 52 h is found to reduce oxygen precipitation in two-step furnace annealing, whereas for Sb-doped wafers, oxygen precipitation rates increase monotonically with the increase in 450 °C preanneal time.


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