Low-threshold high-efficiency AlGaAs-GaAs double-heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition

Dupuis, R. D.; van der Ziel, J. P.; Logan, R. A.; Brown, J. M.; Pinzone, C. J.
February 1987
Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p407
Academic Journal
We have fabricated low-threshold, high-quantum-efficiency, room-temperature AlGaAs-GaAs double-heterojunction injection lasers from epitaxial structures grown by metalorganic chemical vapor deposition directly on Si substrates. These devices have broad-area (125 μm×250 μm) pulsed threshold current densities as low as Jth =3.5 kA/cm2 at ∼23 °C. Ridge-waveguide stripe-geometry lasers (5 μm×250 μm) have pulsed threshold currents as low as 130 mA at ∼23 °C. These stripe-geometry lasers have total external differential quantum efficiencies as high as ηext ∼70%, a value equal to the ηext measured for similar double-heterostructure lasers grown on GaAs substrates. These are the lowest threshold currents and highest external quantum efficiencies yet reported for lasers grown on Si substrates.


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