TITLE

Low-temperature photoluminescence from InGaAs/InP quantum wires and boxes

AUTHOR(S)
Temkin, H.; Dolan, G. J.; Panish, M. B.; Chu, S. N. G.
PUB. DATE
February 1987
SOURCE
Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p413
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InGaAs/InP quantum well layers grown by gas source molecular beam epitaxy have been used to fabricate quantum wires and boxes with transverse dimensions as small as ∼300 Å. These artificial structures exhibit intense low-temperature photoluminescence and show exciton shifts of 8–14 meV expected of low dimensional confinement. Low surface recombination velocity characteristic of InP and its alloys should allow luminescence studies of features as small as ∼30 Å under moderate excitation intensities.
ACCESSION #
9822122

 

Related Articles

  • Zn-diffusion-induced intermixing of InGaAs/InP multiple quantum well structures. Nakashima, Kiichi; Kawaguchi, Yoshihiro; Kawamura, Yuichi; Imamura, Yoshihiro; Asahi, Hajime // Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1383 

    The intermixing process of InGaAs/InP multiple quantum well structures by Zn diffusion at 550 °C is investigated. Secondary ion mass spectroscopy and x-ray analysis reveal that Zn diffusion induces the intermixing of group III atoms, but has little effect on group V profiles. However,...

  • Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wires. Maile, B. E.; Forchel, A.; Germann, R.; Grützmacher, D. // Applied Physics Letters;4/17/1989, Vol. 54 Issue 16, p1552 

    We have investigated the lateral width (Lx) dependence of the quantum efficiency of the excitonic recombination in etched InGaAs/InP wires (40 nm≤Lx≤5 μm). The analysis of data obtained at different temperatures implies that the intensity decay observed for narrow wires is due to...

  • Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy. Temkin, H.; Chu, S. N. G.; Panish, M. B.; Logan, R. A. // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p956 

    Single InGaAs/InP quantum wells and superlattices grown by gas source molecular beam epitaxy were subjected to brief anneals at temperatures in the 600–850 °C range. The resulting increases in the well thickness and changes in composition were monitored by low-temperature...

  • Optical measurement of surface recombination in InGaAs quantum well mesa structures. Tai, K.; Hayes, T. R.; McCall, S. L.; Tsang, W. T. // Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p302 

    Surface recombination of optically created electron-hole plasma in InGaAs/InP quantum well mesa structures formed by chemical beam epitaxy followed by anisotropic plasma etching is observed optically by a picosecond pump-probe method. The exponential carrier lifetime in 3.3-μm-diam structures...

  • Disordering of InGaAs-InP quantum wells by Si implantation. Tell, B.; Johnson, B. C.; Zyskind, J. L.; Brown, J. M.; Sulhoff, J. W.; Brown-Goebeler, K. F.; Miller, B. I.; Koren, U. // Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1428 

    Selective disordering of In0.53Ga0.47As-InP multiple quantum well structures by ion implantation is demonstrated for the first time. As grown, annealed, and Si implanted and annealed samples were studied by transmission electron microscopy, optical absorption, and photoluminescence. A shift of...

  • Electronic properties of In0.53Ga0.47As-InP single quantum wells grown by chemical beam epitaxy. Frei, Michel; Tsui, D. C.; Tsang, W. T. // Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p606 

    In0.53Ga0.47As-InP single quantum well (SQW) structures grown by chemical beam epitaxy (CBE) were studied using low-field magnetotransport, the quantum Hall effect, and far-infrared cyclotron resonance measurements at 4.2 K. We compare results on the two-dimensional electron gas (2DEG) in the...

  • Intersubband absorption in highly strained InGaAs/InAlAs multiquantum wells. Asai, Hiromitsu; Kawamura, Yuichi // Applied Physics Letters;2/19/1990, Vol. 56 Issue 8, p746 

    Highly strained In0.66 Ga0.34 As/In0.30 Al0.70 As multiquantum wells (MQWs) are successfully grown on (001)InP substrates by moleular beam epitaxy. Good crystal quality in the strained MQWs is confirmed by clear excitonic peaks and sharp photoluminescence spectra. Intersubband absorption at a...

  • InGaAs/InP distributed feedback quantum well laser. Temkin, H.; Tanbun-Ek, T.; Logan, R. A.; Olsson, N. A.; Sergent, M. A.; Wecht, K. W.; Cebula, D. A. // Applied Physics Letters;9/24/1990, Vol. 57 Issue 13, p1295 

    We describe InGaAs/InP multiquantum well distributed feedback (DFB) lasers with novel properties atrributable to the quantum well based active layer. The low internal loss waveguide and shallow gratings have allowed the fabrication of lasers with a cavity length varying from 0.5 to 2 mm, and...

  • Linewidth enhancement factor for InGaAs/InP strained quantum well lasers. Dutta, N. K.; Temkin, H.; Tanbun-Ek, T.; Logan, R. // Applied Physics Letters;10/1/1990, Vol. 57 Issue 14, p1390 

    The linewidth enhancement factor α in an InGaAs/InP strained-layer multiple quantum well (MQW) laser emitting near 1.55 μm has been determined from the spontaneous emission spectra below threshold. The active layers in the MQW structure in this device are under 0.7% compressive strain. The...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics