Rapid annealing and the anomalous diffusion of ion implanted boron into silicon

Michel, A. E.; Rausch, W.; Ronsheim, P. A.; Kastl, R. H.
February 1987
Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p416
Academic Journal
The anomalous diffusion of ion implanted boron into silicon is shown to be a transient effect with a decay time that decreases rapidly with increasing anneal temperature. The decay time is approximately 45 min at 800 °C and decreases to the order of a second at 1000 °C. The anomalous displacement in the low concentration region is greater at low temperatures but a larger fraction of the boron is redistributed at high temperature. Sheet resistance measurements agree with the idea that the moving fraction of the boron atoms is electrically active and limited to the intrinsic carrier concentration at the anneal temperature. The activation energy for the decay of the transient is greater than that for the diffusion coefficient, which makes an appropriate rapid thermal anneal cycle an important practical process in the fabrication of shallow p-n junctions.


Related Articles

  • Ambient and dopant effects on boron diffusion in oxides. Wong, C. Y.; Lai, F. S. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1658 

    Diffusion of boron from ion implanted polycrystalline silicon source through 12.5 nm oxides was measured as a function of annealing ambience and doping concentrations of phosphorus or arsenic in the polycrystalline silicon. For comparison, boron ion implanted into 500 nm oxides was also...

  • Implantation damage and anomalous diffusion of implanted boron in silicon. Guo, Qiang; Bao, Ximao; Hong, Jianming; Yan, Yong; Feng, Duan // Applied Physics Letters;4/10/1989, Vol. 54 Issue 15, p1433 

    The anomalous diffusion of implanted boron in silicon damaged by self-implantation has been investigated by cross-section transmission electron microscopy and secondary-ion mass spectroscopy. During rapid thermal annealing, bulges in the boron profile are observed at the edges of the defected...

  • Point defect-based modeling of diffusion and electrical activation of ion implanted boron in crystalline silicon. Jäger, H. U. // Journal of Applied Physics;7/1/1995, Vol. 78 Issue 1, p176 

    Presents point defect-based modeling of diffusion and electrical activation of ion implanted boron in crystalline silicon. Concept of point defect impurity pair diffusion under equilibrium conditions; Mechanisms for boron activation; Adoption of the formalism of point defect impurity diffusion.

  • Fluorine implantation effect on boron diffusion in Si. Park, Yong-Jik; Kim, Jong-Jean // Journal of Applied Physics;1/15/1999, Vol. 85 Issue 2, p803 

    Presents information on a study which focused on fluorine implantation effect on boron diffusion in silicon. Experimental details; Results and discussion.

  • Boron uphill diffusion during ultrashallow junction formation. Duffy, R.; Venezia, V. C.; Heringa, A.; Hüsken, T. W. T.; Hopstaken, M. J. P.; Cowern, N. E. B.; Griffin, P. B.; Wang, C. C. // Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3647 

    The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces...

  • Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation. Johnson, B. C.; McCallum, J. C.; Atanacio, A. J.; Prince, K. E. // Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p101911 

    The concentration dependence of H diffusion in amorphous Si (a-Si) formed by ion implantation is reported for implanted H profiles. An empirical relationship is proposed which relates the diffusion coefficient to the H concentration valid up to 0.3 at. %. B-enhanced H diffusion is observed and...

  • Effects of Hydrogen Atoms on Redistribution of Implanted Boron Atoms in Silicon during Annealing. Yokota, Katsuhiro; Nakase, Shuusaku; Miyashita, Fumiyoshi // AIP Conference Proceedings;2006, Vol. 866 Issue 1, p88 

    Silicon dual-implanted with B and H ions were annealed at temperatures of 700 – 900 °C for 30 min. On Si annealed at temperatures below 800 °C, the redistribution profile of B atoms was the same as that on the as-implanted Si because transient-enhanced diffusion of implanted B atoms...

  • Oxidation-enhanced diffusion of ion-implanted boron in silicon in extrinsic conditions. Miyake, Masayasu // Journal of Applied Physics;3/15/1985, Vol. 57 Issue 6, p1861 

    Examines the oxidation-enhanced diffusion of ion-implanted boron in silicon in extrinsic conditions. Determination of diffusion coefficient; Boron depth profile measurement by secondary ion mass spectroscopy; Boron concentration dependence of diffusion coefficient.

  • Influence of implant condition on the transient-enhanced diffusion of ion-implanted boron in silicon. Juang, M. H.; Wan, F. S.; Liu, H. W.; Cheng, K. L.; Cheng, H. C. // Journal of Applied Physics;3/15/1992, Vol. 71 Issue 6, p2611 

    Describes the influence of implant condition on the transient-enhanced diffusion of ion-implanted boron in silicon. Time dependence of the transient-enhanced diffusion at various annealing temperature; Dependence of junction depth on annealing temperature for the ion-implanted boron; Damage in...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics