TITLE

Band discontinuities in GaAs/AlxGa1-xAs heterojunction photodiodes

AUTHOR(S)
Haase, M. A.; Emanuel, M. A.; Smith, S. C.; Coleman, J. J.; Stillman, G. E.
PUB. DATE
February 1987
SOURCE
Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p404
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have developed a technique for determining band discontinuities in GaAs/AlxGa1-xAs heterostructures by measuring the spectral response of specially designed p+N- heterojunction photodiodes. The spectral response exhibits internal photoemission with well defined threshold energies from which band offsets are easily deduced. This technique is applicable for GaAs/AlxGa1-xAs heterojunctions for which x>=0.5.
ACCESSION #
9822098

 

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