Band discontinuities in GaAs/AlxGa1-xAs heterojunction photodiodes

Haase, M. A.; Emanuel, M. A.; Smith, S. C.; Coleman, J. J.; Stillman, G. E.
February 1987
Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p404
Academic Journal
We have developed a technique for determining band discontinuities in GaAs/AlxGa1-xAs heterostructures by measuring the spectral response of specially designed p+N- heterojunction photodiodes. The spectral response exhibits internal photoemission with well defined threshold energies from which band offsets are easily deduced. This technique is applicable for GaAs/AlxGa1-xAs heterojunctions for which x>=0.5.


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