Determination of band offsets using the photovoltaic effect: Application to the PbS/PbSe heterostructure

Chu, T. K.; Agassi, D.; Martinez, A.
February 1987
Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p419
Academic Journal
The energy-band offsets at a semiconductor heterointerface can be determined by measuring the temperature and wavelength dependence of the photovoltaic response. Results for the PbS/PbSe structure show a type I band alignment with a conduction-band offset ΔEc of ∼48 meV. The method is sensitive to small band offsets and can be applied to the study of other semiconductor systems, especially narrow band-gap materials.


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