TITLE

Influence of microstructure on the photoconductivity of glow discharge deposited amorphous SiC:H and amorphous SiGe:H alloys

AUTHOR(S)
Mahan, A. H.; Raboisson, P.; Tsu, R.
PUB. DATE
February 1987
SOURCE
Applied Physics Letters;2/9/1987, Vol. 50 Issue 6, p335
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We introduce a parameter obtained from infrared measurements as a means of quantifying the amount of amorphous silicon microstructure and its degree of passivation by hydrogen. Using this parameter, the photoconductivities of amorphous silicon (a-Si:H), amorphous silicon carbon (a-SiC:H), and amorphous silicon germanium (a-SiGe:H) fall on the same curve. We discuss the relevance of these results with regard to material quality.
ACCESSION #
9822076

 

Related Articles

  • The double-shear theory and the amorphous-to-crystal transition. Shneck, R.; Brokman, A.; Dariel, M. P. // Journal of Applied Physics;10/15/1990, Vol. 68 Issue 8, p3990 

    Presents a study which focused on the microstructure of crystals formed upon the crystallization of amorphous solids by investigating the double-shear theory and the transition of amorphous solids to crystals. Experimental details; Results and discussion; Conclusion.

  • Microstructure of nematic amorphous block copolymers: Dependence on the nematic volume fraction. Hamm, M.; Goldbeck-Wood, G.; Zvelindovsky, A. V.; Fraaije, J. G. E. M. // Journal of Chemical Physics;5/22/2003, Vol. 118 Issue 20, p9401 

    We present a model for the structure formation in nematic amorphous copolymers and simulation results for a two-dimensional (2D) implementation. The model is based on a dynamic mean-field method, which allows one to specify the polymer system on two different levels of detail. On the detailed...

  • On the correlation among photodegradation, charged dangling bonds and microstructure in hydrogenated amorphous silicon. Irrera, Fernanda // Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1396 

    Presents a study that investigated the correlation among photodegradation, charged dangling bonds and microstructure in hydrogenated amorphous silicon. Details of the experiment; Model and discussion; Conclusions.

  • Exchange coupling in crystalline/amorphous Nd–Fe–B nanoassemblies. Shield, J. E.; Kappes, B. B.; Crew, D. C.; Branagan, D. J. // Journal of Applied Physics;5/1/2000, Vol. 87 Issue 9, p6113 

    The demagnetization behavior of nanoassembled crystalline/amorphous microstructures was investigated. The microstructures consisted of isolated Nd[sub 2]Fe[sub 14]B crystallites surrounded by regions of remaining amorphous phase. The hard magnetic crystallites interacted with the surrounding...

  • Localization of the Si-H stretch vibration in amorphous silicon. Rella, C.W.; van der Voort, M.; Akimov, A.V.; van der Meer, A.F.G.; Dijkhuis, J.I. // Applied Physics Letters;11/8/1999, Vol. 75 Issue 19, p2945 

    Focuses on the transient transmission and transient grating lifetime measurements performed on the Si-H stretch mode as a function of temperature and wavelength using intense infrared pulses from a free electron laser. Microscopic structure and dynamics in the vicinity of the Si-H bond; Highly...

  • 'Fast' and 'slow' metastable defects in hydrogenated amorphous silicon.  // Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p400 

    Examines the metastable defect in hydrogenated amorphous silicon. Analysis on the two-step light soaking experiment at high and low intensities; Establishment of a rate equation system for all defect components; Use of rate equation system to describe the defect kinetics.

  • Difference in light-induced annealing behavior of deposition- and light-induced defects in.... Hata, N.; Matsuda, A. // Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1948 

    Examines the light-induced annealing (LIA) of deposition-induced defects in hydrogenated amorphous silicon. Description of LIA; Efficacy of the light-induced defects; Effects of thermal annealing.

  • Strain dependence of p-i-n hydrogenated amorphous silicon junctions. Utsunomiya, Michito; Yoshida, Akira // Applied Physics Letters;12/5/1988, Vol. 53 Issue 23, p2296 

    The effects of mechanical strain on the electrical properties of p-i-n hydrogenated amorphous silicon junction devices were investigated. When strain was applied parallel to the junction plane, both the forward and reverse currents increased with increasing compressive strain and decreased with...

  • Anomalous substrate and annealing temperature dependencies of heavily boron-doped hydrogenated amorphous silicon. Jang, Jin; Kim, Sung Chul // Journal of Applied Physics;3/1/1987, Vol. 61 Issue 5, p2092 

    Presents information on a study which measured the substrate and annealing temperature dependencies of optical gap, hydrogen concentration, inverse slope of Urbach edge, dark conductivity and photoconductivity for one percent boron-doped hydrogenated amorphous silicon (a-Si:H). Anomalous...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics