Observation of resonant tunneling through GaAs quantum well states confined by AlAs X-point barriers

Bonnefoi, A. R.; McGill, T. C.; Burnham, R. D.; Anderson, G. B.
February 1987
Applied Physics Letters;2/9/1987, Vol. 50 Issue 6, p344
Academic Journal
Experimental evidence of resonant tunneling via quasistationary states confined by AlAs X-point potential energy barriers is reported in GaAs/AlAs double barrier heterostructures grown in the [100] direction. The quantum well energy levels giving rise to the negative differential resistances observed in the current-voltage characteristics are identified by calculating the energy-band diagrams of the structures. These resonant energy levels correspond to states confined in the GaAs well not only by the AlAs Γ-point potential energy barriers but also by the AlAs X-point barriers. The quasibound X states are associated with the large longitudinal effective mass in AlAs corresponding to the direction perpendicular to the heterojunction interfaces.


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