TITLE

Raman scattering from rapid thermally annealed tungsten silicide

AUTHOR(S)
Kumar, Sandeep; Dasgupta, Samhita; Jackson, Howard E.; Boyd, Joseph T.
PUB. DATE
February 1987
SOURCE
Applied Physics Letters;2/9/1987, Vol. 50 Issue 6, p323
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Raman scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films have been formed by rapid thermal annealing of thin tungsten films sputter deposited on silicon substrates. The Raman data are interpreted by using data from resistivity measurements, Auger and Rutherford backscattering measurements, and scanning electron microscopy.
ACCESSION #
9822048

 

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