Raman scattering from rapid thermally annealed tungsten silicide

Kumar, Sandeep; Dasgupta, Samhita; Jackson, Howard E.; Boyd, Joseph T.
February 1987
Applied Physics Letters;2/9/1987, Vol. 50 Issue 6, p323
Academic Journal
Raman scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films have been formed by rapid thermal annealing of thin tungsten films sputter deposited on silicon substrates. The Raman data are interpreted by using data from resistivity measurements, Auger and Rutherford backscattering measurements, and scanning electron microscopy.


Related Articles

  • A study of epitaxially stabilized FeSi2 by surface enhanced Raman scattering. Mo, Yujun; von Känel, H.; Onda, N.; Wachter, P.; Mattei, G. // Journal of Applied Physics;8/1/1994, Vol. 76 Issue 3, p1968 

    Deals with a study which examined epitaxially stabilized iron silicide films using surface enhanced Raman scattering. Reason for the extensive study of iron silicides; Types of pseudomorphic epitaxial silicides; Applications of enhanced Raman scattering.

  • Raman study of the formation of tungsten silicide thin films. Vuppuladhadium, Rama; Jackson, Howard E.; Boyd, Joseph T. // Journal of Applied Physics;6/1/1993, Vol. 73 Issue 11, p7887 

    Presents a study which examined the formation of tungsten silicide thin films using Raman scattering. Contribution of Raman scattering in understanding structural properties of thin films; Method used in preparing and depositing the tungsten film; Characteristics of the rapid thermally annealed...

  • Arsenic Redistribution Induced by Low-Temperature Ni Silicidation at 450°C on Shallow Junctions. Yu-Long Jiang; Guo-Ping Ru; Xin-Ping Qu; Bing-Zong Li; Agarwal, Aditya; Poate, John; Hossain, Khalid; Holland, Wayne // Journal of Electronic Materials;May2006, Vol. 35 Issue 5, p937 

    Redistribution of arsenic (As) during silicidation of a 13-nm Ni film on an n+/p junction at 450°C is investigated. NiSi formation is observed by x-ray diffraction, micro-Raman scattering spectroscopy, and Rutherford backscattering spectroscopy (RBS). Both secondary ion mass spectroscopy and...

  • Formation of β-FeSi2 by ion implantation of 90 keV Fe10+ ions on N-type silicon. Rajesh, P. V.; Pati, S. P.; Krishna, J. B. M.; Ghosh, B.; Das, D. // AIP Conference Proceedings;6/5/2012, Vol. 1447 Issue 1, p1051 

    The semiconducting disilicide of the Fe-Si binary system β-FeSi2 has been synthesized by the Ion Beam Synthesis (IBS) technique. High purity n-type float zone silicon wafers have been irradiated at various fluences from 5×1015 to 1×1017 by Fe10+ beam at 90 keV using a ECR based low...

  • Silicide formation by concentration controlled phase selection. Pretorius, R.; Mayer, J.W. // Journal of Applied Physics;3/1/1997, Vol. 81 Issue 5, p2448 

    Examines silicide formation by concentration controlled phase selection. Decrease in metal concentration at growth interface; Thermodynamic explanation for controlled phase selection; Application of controlled phase selection to silicide formation.

  • Resonance rotational hyper-Raman scattering intensities of symmetric top molecules. Ziegler, L. D.; Chung, Y. C.; Zhang, Y. P. // Journal of Chemical Physics;10/15/1987, Vol. 87 Issue 8, p4498 

    Resonance rotational hyper-Raman scattering cross sections excited by identical linearly polarized incident photons are derived for symmetric tops. In the absence of pure dephasing, the rotational structure of a RHR vibrational transition is described, in general, by five scattering invariants...

  • Triple monochromator for Raman scattering with electronic coupling. Ohana, I.; Yacoby, Y.; Bezalel, M. // Review of Scientific Instruments;Jan1986, Vol. 57 Issue 1, p9 

    An electronic coupled triple monochromator is presented. The system is composed of double and single monochromators coupled together electronically and controlled by a microcomputer. The tracking is obtained via a feedback loop between the motor’s velocities and two shaft encoders which...

  • Spectra and structure of organogermanes. XXII. Microwave, infrared, and Raman spectra of methylgermyl cyanide. Durig, J. R.; Mohamad, A. B.; Attia, G. M.; Li, Y. S.; Cradock, Stephen // Journal of Chemical Physics;7/1/1985, Vol. 83 Issue 1, p10 

    The microwave spectra have been recorded from 18.0 to 26.5 GHz for 12CH3GeH212C14N, 13CH3GeH212C14N, 12CH3GeH212C15N, 12CH3GeH213C14N, 12CH3GeD212C14N, and 12CD3GeH212C14N of the four naturally occurring isotopes of germane: 70Ge, 72Ge, 74Ge, and 76Ge. Only a-type transitions were observed and...

  • Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li. Bundesmann, C.; Ashkenov, N.; Schubert, M.; Spemann, D.; Butz, T.; Kaidashev, E.M.; Lorenz, M.; Grundmann, M. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1974 

    Polarized micro-Raman measurements were performed to study the phonon modes of Fe, Sb, Al, Ga, and Li doped ZnO thin films, grown by pulsed-laser deposition on c-plane sapphire substrates. Additional modes at about 277, 511, 583, and 644 cm[sup -1], recently assigned to N incorporation [A....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics