TITLE

Dependence of radiation-induced interface traps on silicide gate stoichiometry in silicide/SiO2/Si devices

AUTHOR(S)
Buchner, S.; Natan, M.; Kang, K.; Gill, D.
PUB. DATE
February 1987
SOURCE
Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p242
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The density of radiation-induced traps at the Si/SiO2 interface in TiSix and WSix gate metal-oxide-semiconductor capacitors is shown to depend on the stoichiometry (x value) of the silicide. The dependence is such that capacitors with metal-rich silicide gates exhibit a smaller increase in interface traps than do capacitors with silicon-rich gates. These results can be qualitatively explained by the dependence of the silicide stress on stoichiometry—metal-rich films are under large tensile stress that inhibits the generation of radiation-induced interface traps.
ACCESSION #
9822035

 

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