Infrared Raman probing of deep-lying damaged layers in hydrogen-implanted GaAs

Anastassakis, E.; Tatarkiewicz, J.
February 1987
Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p245
Academic Journal
We report on the use of a cw Nd:yttrium aluminum garnet infrared laser to probe by Raman scattering the damaged layers of GaAs implanted with high-energy(∼2 MeV) protons and deuterons. Such layers are too deep into the material to be probed by visible light. As the implanted area is approached laterally, we observe a gradual decrease in the scattering intensity of the longitudinal optical and transverse optical phonons and a downward shift of their frequencies. These effects are attributed to defect-induced absorption and lattice strains. The results demonstrate the advantages of the technique for studying the damage in deeply buried layers of radiation-modified materials.


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