Observation of valence-band discontinuity of hydrogenated amorphous silicon/hydrogenated amorphous silicon carbide heterojunction by photocurrent-voltage measurements

Okayasu, Yoshinobu; Fukui, Keitaro; Matsumura, Mitsuo
February 1987
Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p248
Academic Journal
Photocurrent-voltage measurements at different wavelengths exhibit the valence-band discontinuity of a hydrogenated amorphous silicon/hydrogenated amorphous silicon carbide heterojunction. A band discontinuity of ∼100 meV is deduced based on a tunneling model for a hole barrier. This energy gap is relatively small compared to that for the conduction band, but significantly affects the characteristics of heterojunction p-i-n solar cells.


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