Formation of epitaxial NiSi2 of single orientation on (111) Si inside miniature size oxide openings

Chang, C. S.; Nieh, C. W.; Chen, L. J.
February 1987
Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p259
Academic Journal
Epitaxial NiSi2 of single orientation was grown on (111) Si inside miniature size oxide openings. Striking oxide opening size effects on the growth of NiSi2 epitaxy were observed. The formation temperature of NiSi2 on (111) Si was found to be as low as 550 °C inside oxide openings 1.8 μm or smaller in size. Epitaxial NiSi2 of single orientation which is identical to that of (111) Si substrate was formed inside oxide openings of or smaller than 1.8, 1, and 0.8 μm in size in samples annealed at 550–750, 800, and 850–900 °C, respectively. The results are discussed in terms of the variation in tensile stress exerted by oxide near the silicon surface and small free-energy difference between type A and type B NiSi2 epitaxy inside small size oxide openings.


Related Articles

  • Study of dynamics and mechanism of metal-induced silicon growth. Guliants, Elena A.; Anderson, Wayne A. // Journal of Applied Physics;4/15/2001, Vol. 89 Issue 8 

    The present study addresses the mechanism of metal-induced growth of device-quality silicon thin films. Si deposition was performed by magnetron sputtering on a 25-nm-thick Ni prelayer at 525-625 °C and yielded a continuous, highly crystalline film with a columnar structure. A Ni disilicide...

  • High sensitivity in magnetoresistance of epitaxial NiFe/Cu/Co (/Cu) (100) superlattices. Kawawake, Y.; Sakakima, H.; Irie, Y.; Satomi, M. // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p6231 

    Presents a study that investigated the high sensitivity in magnetoresistance of epitaxial nickel compound superlattices. Characteristics of the compound; Details on the experiment; Discussion on the results of the study.

  • F-enhanced morphological and thermal stability of NiSi films on BF[sub 2][sup +]-implanted Si(001). Wong, A. S. W.; Chi, D. Z.; Loomans, M.; Ma, D.; Lai, M. Y.; Tjiu, W. C.; Chua, S. J.; Lim, C. W.; Greene, J. E. // Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5138 

    The morphological and thermal stability of conducting NiSi films formed on Si(001) are significantly enhanced by pre-implantation of the Si wafer with BF[sup +, sub 2]. In the absence of F, the maximum silicidation temperature T[sub max] is 650 °C; higher temperatures lead to the formation of...

  • Realization of high quality epitaxial current-perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer. Jiamin Chen; Liu, J.; Sakuraba, Y.; Sukegawa, H.; Li, S.; Hono, K. // APL Materials;2016, Vol. 4 Issue 5, p1 

    In this letter, we report a NiAl buffer layer as a template for the integration of epitaxial current-perpendicular-plane-giant magnetoresistive (CPP-GMR) devices on a Si(001) single crystalline substrate. By depositing NiAl on a Si wafer at an elevated temperature of 500 °C, a smooth and...

  • Exploration of magnetization reversal and coercivity of epitaxial NiO {111}/NiFe films. Lai, Chih-Huang; Matsuyama, Hideo; White, Robert L.; Anthony, Thomas C.; Bush, Gary G. // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p6389 

    Presents a study which explored the magnetization reversal and coercivity of epitaxial nitrogen oxide (III)/nickel iron films. Methods; Results; Discussion.

  • Epitaxial growth of ferromagnetic Ni[sub 2]MnGa on GaAs(001) using NiGa interlayers. Dong, J. W.; Chen, L. C.; Xie, J. Q.; Mu¨ller, T. A. R.; Carr, D. M.; Palmstrøm, C. J.; McKernan, S.; Pan, Q.; James, R. D. // Journal of Applied Physics;12/15/2000, Vol. 88 Issue 12 

    Heusler alloy Ni[sub 2]MnGa thin films have been grown pseudomorphically on a relaxed NiGa interlayer on GaAs(001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction patterns, ex situ x-ray diffraction, and cross-sectional view transmission electron microscopy...

  • Epitaxial layers of nickel fluoride on Si(111): Growth and stabilization of the orthorhombic phase. Banshchikov, A.; Golosovskii, I.; Krupin, A.; Koshmak, K.; Sokolov, N.; Chernenkov, Yu.; Yagovkina, M.; Ulin, V.; Tabuchi, M. // Physics of the Solid State;Aug2015, Vol. 57 Issue 8, p1647 

    The growth and crystal structure of NiF layers on CaF/Si(111) heteroepitaxial substrates have been investigated. It has been shown that molecular beam epitaxy at temperatures of 350-450°C provides a stable epitaxial growth of the metastable orthorhombic NiF phase (structural type CaCl) with a...

  • Very low chemical disorder in epitaxial NiMnSb films on GaAs(111)B. van Roy, W.; Wójcik, M.; J&ecedil;dryka, E.; Nadolski, S.; Jalabert, D.; Brijs, B.; Borghs, G.; de Boeck, J. // Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4214 

    Single-crystalline NiMnSb(111) films with negligibly low defect levels have been grown epitaxially on GaAs(111)B using molecular beam epitaxy and characterized by nuclear magnetic resonance. In a film with only 1% deviation from stoichiometry, 1.1% of all Mn atoms is involved in planar defects,...

  • Exchange bias and fourfold magnetic anisotropy in Permalloy thin film on epitaxial hematite antiferromagnet. Bali, R.; Stelmashenko, N. A.; Blamire, M. G. // Journal of Applied Physics;Mar2008, Vol. 103 Issue 5, p053911 

    Fourfold anisotropy was observed in NiFe films deposited on epitaxial antiferromagnet α-Fe2O3. The anisotropy was preserved despite off-axis magnetic field annealing (MFA) below the Néel temperature (TN). The cumulative effect of this fourfold anisotropy and exchange coupling due to MFA...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics