TITLE

Nondestructive measurement of indium content in semi-insulating GaAs substrates and ingots

AUTHOR(S)
Kirillov, D.; Vichr, M.; Powell, R. A.
PUB. DATE
February 1987
SOURCE
Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p262
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the use of room-temperature photoluminescence to determine low levels of indium in semi-insulating GaAs intended for use as low dislocation material for substrates of integrated circuits. We have compared this technique with other optical methods such as low-temperature (4.2 K) photoluminescence and Raman scattering and find it more convenient for this application. Room-temperature photoluminescence easily allows measurement of In content in InxGa1-xAs in the range of 0.1–2% with a standard deviation of 0.1%, which is sufficient for most practical applications. The technique is nondestructive and rapid. The measurement can be done on polished, sawed, or etched surfaces, or on side surfaces of as-grown ingots without any treatment. To illustrate its use, we have measured variations in the In content of semi-insulating GaAs due to segregation of In in the melt during liquid encapsulated Czochralski growth.
ACCESSION #
9822021

 

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