Electron spin resonance studies on buried oxide silicon-on-insulator

Makino, T.; Takahashi, J.
February 1987
Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p267
Academic Journal
Electron spin resonance is used to study defects in high-dose oxygen-ion implanted Si substrates. By this implantation, a crystalline Si/buried SiO2/crystalline Si structure is created. Two kinds of defect centers are found; one is assigned to the amorphous center, and the other, the Pb0 center, which has been observed at thermally grown SiO2/(111) Si interfaces. The observed Pb0 center appears to exist near precipitated SiO2/crystalline Si interfaces, rather than crystalline Si/buried SiO2 interfaces. When annealed at 1150 °C, spin density decreases due to oxygen outdiffusion from the crystalline Si.


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