Interactions between bombardment-induced defects in GaAs

Makram-Ebeid, Sherif; Boher, Pierre; Lannoo, Michel
February 1987
Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p270
Academic Journal
Interdefect electron hopping is shown to play an important role in the physical manifestations of radiation induced defects in GaAs. In fast electron irradiated n-GaAs, we are led to attribute the observed high-temperature deep level transient spectroscopy (DLTS) peaks to defect pairs each including an antisite AsGa related midgap level defect together with a VAs vacancy related shallower level defect. In contrast with recent publications, we show that one can consistently interpret DLTS, electrical conductivity, and electron paramagnetic resonance experimental data in terms of the same irradiation induced defects.


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