Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides

Levine, B. F.; Malik, R. J.; Walker, J.; Choi, K. K.; Bethea, C. G.; Kleinman, D. A.; Vandenberg, J. M.
February 1987
Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p273
Academic Journal
We have measured the infrared intersubband absorption at 8.2 μm in doped GaAs/AlAs quantum well superlattices. Waveguide geometry experiments demonstrate strong absorption with 95% of the incident infrared energy being absorbed.


Related Articles

  • Column III-column V sublattice interaction via Zn and Si impurity-induced layer disordering of 13C-doped AlxGa1-xAs-GaAs superlattices. Guido, L. J.; Major, J. S.; Baker, J. E.; Holonyak, N.; Cunningham, B. T.; Stillman, G. E. // Applied Physics Letters;2/5/1990, Vol. 56 Issue 6, p572 

    Experiments are described employing secondary-ion mass spectroscopy (SIMS) to study the stability of 13C-doped Al0.5Ga0.5As-GaAs superlattices against Zn and Si impurity-induced layer disordering (IILD). The modulation depth of the SIMS 27Al and 13C signals is used as a sensitive probe of column...

  • Hydrolyzation oxidation of AlxGa1-xAs-AlAs-GaAs quantum well heterostructures and superlattices. Dallesasse, J. M.; Holonyak, N.; Sugg, A. R.; Richard, T. A.; El-Zein, N. // Applied Physics Letters;12/24/1990, Vol. 57 Issue 26, p2844 

    Data are presented on the conversion (selective conversion) of high-composition (AlAs)x(GaAs)1-x layers, e.g., in AlxGa1-xAs-AlAs-GaAs quantum well heterostructures and superlattices (SLs), into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures...

  • Electrical transport of holes in GaAs/InGaAs/GaAs single strained quantum wells. Fritz, I. J.; Drummond, T. J.; Osbourn, G. C.; Schirber, J. E.; Jones, E. D. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1678 

    We report electrical transport data for holes in single strained quantum well structures of the type GaAs/InxGa1-xAs/GaAs with x≊0.2. With modulation doping, 4 K mobilities of ∼3×104 cm2/V s have been achieved. This value is near that attained for electrons in comparable...

  • Optical absorption and modulation behavior of strained InxGa1-xAs/GaAs(100)(x≤0.25) multiple quantum well structures grown via molecular beam epitaxy. Chen, Li; Rajkumar, K. C.; Madhukar, A. // Applied Physics Letters;12/3/1990, Vol. 57 Issue 23, p2478 

    We report on the optical absorption and modulation characteristics of strained InxGa1-xAs/GaAs(0.1≤x≤0.25) multiple quantum well (MQW) structures grown on GaAs (100) substrates which also included regions of prepatterned mesas. Sharp excitonic features were realized in samples...

  • Optically controlled absorption modulator based on state filling of InxGa1-xAs/GaAs quantum wells. Iannelli, J. M.; Maserjian, J.; Hancock, B. R.; Andersson, P. O.; Grunthaner, F. J. // Applied Physics Letters;1/23/1989, Vol. 54 Issue 4, p301 

    We report the first demonstration of an optically controlled absorption modulator based on state filling in a periodically doped InxGa1-xAs/GaAs multiple quantum well structure. Differential absorption of approximately 104 cm-1 is observed in the quantum wells of our test structure at saturation...

  • Polarization and field dependent two-photon absorption in GaAs/AlGaAs multiquantum well.... Tsang, H.K.; Penty, R.V.; White, I.H.; Grant, R.S.; Sibbet, W.; Soole, J.B.D.; LeBlanc, H.P.; Andreadakis, N.C.; Colas, E.; Kim, M.S. // Applied Physics Letters;12/23/1991, Vol. 59 Issue 26, p3440 

    Examines the two-photon absorption in GaAs/AlGaAs multiquantum well waveguides. Dependency of the photon absorption on the applied electric field; Measurement of the two-photon absorption coefficient; Observation on the ultrafast nonlinear refraction.

  • Band-edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells. Kost, Alan; Lee, H. C.; Zou, Yao; Dapkus, P. D.; Garmire, Elsa // Applied Physics Letters;4/3/1989, Vol. 54 Issue 14, p1356 

    We describe a novel approach to determining absorption coefficients in thin films using luminescence. The technique avoids many of the difficulties typically encountered in measurements of thin samples, Fabry–Perot effects, for example, and can be applied to a variety of materials. We...

  • Intersubband absorption in highly strained InGaAs/InAlAs multiquantum wells. Asai, Hiromitsu; Kawamura, Yuichi // Applied Physics Letters;2/19/1990, Vol. 56 Issue 8, p746 

    Highly strained In0.66 Ga0.34 As/In0.30 Al0.70 As multiquantum wells (MQWs) are successfully grown on (001)InP substrates by moleular beam epitaxy. Good crystal quality in the strained MQWs is confirmed by clear excitonic peaks and sharp photoluminescence spectra. Intersubband absorption at a...

  • Electro-optical multistability in GaAs/AlAs superlattices at room temperature. Schneider, H.; Fujiwara, K.; Grahn, H. T.; Klitzing, K. v.; Ploog, K. // Applied Physics Letters;2/12/1990, Vol. 56 Issue 7, p605 

    We have studied the optical absorption properties of a GaAs/AlAs short-period superlattice at room temperature in an electric field perpendicular to the layers. Several pronounced optical transitions related to Wannier–Stark localization are observed indicating a coherence length of at...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics