Optical and electronic properties of reactively sputtered amorphous GeNx:H

Honma, I.; Kawai, K.; Komiyama, H.; Tanaka, K.
February 1987
Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p276
Academic Journal
Basic photoelectronic properties of hydrogenated amorphous germanium nitride (a-GeNx:H) are presented for the first time. Amorphous-GeNx:H films were prepared by an rf reactive sputtering of a Ge target using Ar+N2+H2 mixed gases and their optical band gaps were controlled continuously in the range from 1.0 to 3.3 eV by varying the compositional ratio of nitrogen to germanium. In contrast to H-free a-GeNx, the temperature dependence of the dark conductivity of a-GeNx:H shows that thermally activated band conduction prevails in the carrier transport over a wide temperature range at least down to 180 K. The photo-to-dark conductivity ratio under AM1 light of unoptimized a-GeNx:H amounts to 40.


Related Articles

  • Microstructural stability of metastable amorphous and crystalline Ge1-xSnx alloys. Lee, Susanne M. // Journal of Applied Physics;2/15/1994, Vol. 75 Issue 4, p1987 

    Presents a study that produced amorphous germanium-tin films by radio frequency sputtering. Thickness of the films; Transformation of the films to polycrystalline samples; Mechanisms of formation of the phase.

  • Growth of a-C:H and a-C:H Films Produced by Magnetron Sputtering. Zvonareva, T. K.; Ivanov-Omskiı, V. I.; Nashchekin, A. V.; Sharonova, L. V. // Semiconductors;Jan2000, Vol. 34 Issue 1, p98 

    Growth behavior of a-C:H and a-C:H〈Cu〉 films produced by the magnetron sputtering of a composite target consisting of graphite and copper plates in an argon-hydrogen atmosphere was studied by infrared spectroscopy, scanning electron microscopy, and ellipsometry. The introduction of...

  • Oxidation Study of RF Sputtered Amorphous and Polycrystalline Silicon Germanium Films. Leoy, C. C.; Kan, Ewh; Arianto, J.; Choi, W. K.; Wee, A. T. S.; Liu, Y. J. // International Journal of Modern Physics B: Condensed Matter Phys;11/20/2002, Vol. 16 Issue 28/29, p4224 

    Oxidation study of rf sputtered amorphous and polycrystalline silicon germanium (Si[sub 1-x]Ge[sub x]) film which was conducted using infrared spectroscopy (FTIR). The oxidation results showed linear oxidation rate of amorphous Si[sub 1-x]Ge[sub x] and polycrystalline Si[sub 1-x]Ge[sub x] films...

  • Reduced Staebler–Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films. Pinarbasi, Mustafa; Abelson, John R.; Kushner, Mark J. // Applied Physics Letters;4/23/1990, Vol. 56 Issue 17, p1685 

    The kinetics of light-induced defect generation or the Staebler–Wronski effect (SWE) have been measured on device quality hydrogenated amorphous silicon (a-Si:H) films having hydrogen contents (CH) of ∼10–28 at. %. The films were deposited with direct current (dc) magnetron...

  • Substrate-plasma interaction during amorphous silicon thin films growth by sputtering technique. F. Khelfaoui; M. S. Aida // European Physical Journal - Applied Physics;Jun2009, Vol. 47 Issue 9, p0 

    The present paper deals with the investigation of Argon ions – substrate interactions during film growth and their influence on sputtered hydrogenated amorphous silicon (a-Si:H) thin films structural properties. These interactions are characterized by mean of the calculation of the energy...

  • Hydrogenated amorphous silicon formation by flux control and hydrogen effects on the growth mechanism. Toyoda, H.; Sugai, H.; Kato, K.; Yoshida, A.; Okuda, T. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1648 

    The composition of particle flux to deposit hydrogenated amorphous silicon films in a glow discharge is controlled by a combined electrostatic-magnetic deflection technique. As a result, the films are formed firstly without hydrogen ion flux, secondly by neutral flux only, and thirdly by all...

  • Magnetic and optical characteristics of bilayered films composed of Tb-Fe-Co layer with overlayers of Co-Cr, Ni-Fe, Ta, and C. Song, Kibong; Naoe, Masahiko // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p6357 

    Provides information on a study that prepared amorphous terbium-iron-cobalt single layers and terbium-iron-cobalt/M (M:Tb,C,Co[sub82]Cr[sub18], Ni[sub81]Fe[sub19]) bilayers using a facing targets sputtering apparatus. Experimental procedures; Results and discussion; Conclusions.

  • Ne+ ion sputtering effect on amorphous Ga-In-Zn-O thin-film surface investigated by high-resolution XPS. Kang, Se-Jun; Lee, Mi Ji; Baik, Jae Yoon; Kim, Hyeong-Do; Thakur, Anup; Shin, Hyun-Joon; Chung, JaeGwan; Lee, Eunha; Lee, Jaecheol; Lee, JaeHak // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p121 

    The effect of Ne+ ion sputtering on amorphous Ga-In-Zn-O (a-GIZO) thin films was investigated by using surface-sensitive, synchrotron-radiation-based, high-resolution X-ray photoelectron spectroscopy (XPS). a-GIZO thin films having different compositions (Ga2O3:In2O3:ZnO = 1:1:1, 2:2:1, 3:2:1,...

  • Band-gap tailoring in amorphous germanium-nitrogen compounds. Chambouleyron, I. // Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p117 

    In this letter some properties of off-stoichiometric amorphous germanium-nitrogen compounds are presented. It is shown that the inclusion of nitrogen atoms in the Ge network produces important changes in the optical and electrical properties of the material. The samples were prepared by rf...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics