cw phase-locked array Ga0.25In0.75As0.5P0.5-InP high power semiconductor laser grown by low-pressure metalorganic chemical vapor deposition

Razeghi, M.; Blondeau, R.; Krakowski, M.; de Cremoux, B.; Duchemin, J. P.; Lozes, F.; Martinot, M.; Bensoussan, M. A.
February 1987
Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p230
Academic Journal
Continuous and pulsed phase-locked operation of a high power GaInAsP-InP semiconductor laser emitting at 1.3 μm has been achieved. The laser consists of a seven-striped array of ridge-island lasers fabricated by a two-step low-pressure metalorganic chemical vapor deposition growth technique. Linear output powers greater than 300 mW (pulsed) and 120 mW (cw) have been obtained with no facet coatings. The far-field full widths at half power, both parallel and perpendicular to the junction plane, were 3° and 45°, respectively, at 10 mW (at 20 °C) which is evidence for strong stripe-to-stripe coupling.


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