TITLE

Correlation of interface composition and barrier height for model AuGeNi contacts to GaAs

AUTHOR(S)
Waldrop, J. R.; Grant, R. W.
PUB. DATE
February 1987
SOURCE
Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p250
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Model contacts to GaAs that include nonalloyed layered structures of Au, Ge, and Ni in various combinations are used to establish a correlation between interface composition and large changes in barrier height [lowercase_phi_synonym]B. The interface Fermi level EiF and chemistry during initial contact formation were investigated by x-ray photoemission spectroscopy; the corresponding [lowercase_phi_synonym]B for the thick contact was obtained by current-voltage (I-V) measurement. The circumstances under which a thin (∼10 Å) Ge layer at the GaAs interface can produce [lowercase_phi_synonym]B =∼0.25–0.4 eV (as measured by I-V) are described. For all model contacts examined a [lowercase_phi_synonym]B range from ∼0.25 to 0.9 eV is observed. This result questions the usual assumption of a relatively fixed [lowercase_phi_synonym]B of ∼0.8 eV for the alloyed AuGeNi contact and offers an alternative explanation for the mechanism of ohmic contact formation. The conditions that define the exceptionally low [lowercase_phi_synonym]B contacts provide a guide for the design of nonalloyed tunnel ohmic contacts.
ACCESSION #
9821988

 

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