TITLE

Silicon diffusion into AlxGa1-xAs (x=0–0.4) from a sputtered silicon film

AUTHOR(S)
Omura, E.; Wu, X. S.; Vawter, G. A.; Hu, E. L.; Coldren, L. A.; Merz, J. L.
PUB. DATE
February 1987
SOURCE
Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p265
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Silicon diffusion into AlxGa1-xAs (x=0–0.4) from a sputtered Si film is described. It is shown that both the diffusion rate and the surface concentration of Si decrease with increasing Al mole fraction. The diffusion behavior of Si in AlxGa1-xAs is discussed in terms of the binding energy of the Al–As bond and mixed crystal disorder.
ACCESSION #
9821985

 

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