Silicon diffusion into AlxGa1-xAs (x=0–0.4) from a sputtered silicon film

Omura, E.; Wu, X. S.; Vawter, G. A.; Hu, E. L.; Coldren, L. A.; Merz, J. L.
February 1987
Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p265
Academic Journal
Silicon diffusion into AlxGa1-xAs (x=0–0.4) from a sputtered Si film is described. It is shown that both the diffusion rate and the surface concentration of Si decrease with increasing Al mole fraction. The diffusion behavior of Si in AlxGa1-xAs is discussed in terms of the binding energy of the Al–As bond and mixed crystal disorder.


Related Articles

  • Structural and electrical properties of reactively sputtered InN thin films on AlN-buffered (00.1) sapphire substrates: Dependence on buffer and film growth temperatures and thicknesses. Kistenmacher, T. J.; Ecelberger, S. A.; Bryden, W. A. // Journal of Applied Physics;8/1/1993, Vol. 74 Issue 3, p1684 

    Presents a study that investigated indium-nitrogen overlayers on aluminum-nitrogen-buffered sapphire by reactive magnetron sputtering. Dependencies of several basic materials properties on such key deposition parameters such as the growth temperatures of the insulating aluminum-nitrogen buffer...

  • Nanoindentation Behavior of Nanolayered Metal-Ceramic Composites. Deng, X.; Cleveland, C.; Karcher, T.; Koopman, M.; Chawla, N.; Chawla, K. K. // Journal of Materials Engineering & Performance;Aug2005, Vol. 14 Issue 4, p417 

    Small-length scale multilayered structures are attractive materials due to their extremely high strength and flexibility, relative to conventional laminated composites. In this study, nanolayered laminated composites of Al and SiC were synthesized by DC/RF magnetron sputtering. The...

  • Magnetic anisotropy and high frequency permeability of multilayered nanocomposite FeAlO thin films. Ma, Y. G.; Liu, Y.; Tan, C. Y.; Liu, Z. W.; Ong, C. K. // Journal of Applied Physics;9/1/2006, Vol. 100 Issue 5, p054307 

    A cool-down step deposition process (multistep deposition with cool-down interval) was used to grow nanocomposite FeAlO thin films of various thicknesses up to 440 nm by magnetron sputtering at a substrate temperature of 15 °C. The effect of the number of cool-down steps on the soft magnetic...

  • Diffussion with multiple kinds of trapping sites. Kasuya, Tadashi; Fuji, Masao // Journal of Applied Physics;3/15/1998, Vol. 83 Issue 6, p3039 

    Focuses on a study which examined the impact of diffusion in solid on trapping sites which have different binding energies, with reference to hydrogen in steel. Details on local equilibrium treatment; Methodology used to conduct the study; Results of the study.

  • Biexciton luminescence from Al[sub x]Ga[sub 1-x]N epitaxial layers. Yamada, Yoichi; Ueki, Yusuke; Nakamura, Kohzo; Taguchi, Tsunemasa; Kawaguchi, Yasutoshi; Ishibashi, Akihiko; Yokogawa, Toshiya // Applied Physics Letters;3/22/2004, Vol. 84 Issue 12, p2082 

    Excitonic optical properties of Ga-rich Al[sub x]Ga[sub 1-x]N ternary alloy epitaxial layers (x=0.019, 0.038, 0.057, 0.077, and 0.092) have been studied by means of photoluminescence (PL) and time-resolved PL spectroscopy. The luminescence line due to radiative recombination of biexcitons was...

  • Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN/AlGaN quantum wells. Stokker-Cheregi, F.; Vinattieri, A.; Feltin, E.; Simeonov, D.; Levrat, J.; Carlin, J.-F.; Butté, R.; Grandjean, N.; Gurioli, M. // Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p152105 

    We report on time-resolved photoluminescence measurements carried out along the thickness gradient of two types of GaN/AlGaN quantum wells with low Al content in the barriers (5% and 9%, respectively). A reduction of the biexciton binding energy with increasing well thickness is observed, as a...

  • Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells. Dasgupta, S.; Knaak, C.; Moser, J.; Bichler, M.; Roth, S. F.; Fontcuberta i Morral, A.; Abstreiter, G.; Grayson, M. // Applied Physics Letters;10/1/2007, Vol. 91 Issue 14, p142120 

    A doping series of AlAs (001) quantum wells with Si δ-modulation doping on both sides reveals different dark and postillumination saturation densities, as well as temperature dependent photoconductivity. The lower dark two-dimensional electron density saturation is explained assuming deep...

  • Simulation of the effect of bulk vacancy diffusion on the shape of sputtered films deposited onto trenches and vias. Winterton, S. S.; Smy, T.; Dew, S. K.; Brett, M. J. // Journal of Applied Physics;9/15/1995, Vol. 78 Issue 6, p3572 

    Presents simulation of the effect of bulk vacancy diffusion on the shape of sputtered films deposited onto trenches and vias. Method of the study; Results and discussion; Conclusion.

  • The interplay of sputtering and oxidation during plasma diffusion treatment. Parascandola, S.; Kruse, O.; Moller, W. // Applied Physics Letters;9/27/1999, Vol. 75 Issue 13, p1851 

    Examines the interplay of sputtering and oxidation during plasma diffusion treatment. Experimental results obtained during nitriding of stainless steel from real-time depth-resolved compositional analysis by elastic recoil detection; Suggestions for practical applications and optimization of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics