TITLE

Edge- and surface-emitting distributed Bragg reflector laser with multiquantum well active/passive waveguides

AUTHOR(S)
Kojima, Keisuke; Noda, Susumu; Mitsunaga, Kazumasa; Kyuma, Kazuo; Hamanaka, Koichi; Nakayama, Takashi
PUB. DATE
February 1987
SOURCE
Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p227
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A novel AlGaAs/GaAs distributed Bragg reflector laser utilizing a multiquantum well structure both as an active waveguide and as a low loss passive waveguide was fabricated. The threshold current was 102 mA at room temperature, and the differential quantum efficiency for the edge- and surface-emitted light was 16% and 3.7%, respectively. No mode hopping was observed in a temperature range of 35 K. A 0.17°×17° far-field pattern was obtained for the surface-emitted light.
ACCESSION #
9821976

 

Related Articles

  • Index-guided AlxGa1-xAs-GaAs quantum well heterostructure lasers fabricated by vacancy-enhanced impurity-induced layer disordering from an internal (Si2)y(GaAs)1-y source. Guido, L. J.; Jackson, G. S.; Plano, W. E.; Hsieh, K. C.; Holonyak, N.; Burnham, R. D.; Epler, J. E.; Thornton, R. L.; Paoli, T. L. // Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p609 

    A unique form of Si impurity-induced layer disordering (Si IILD) is described that utilizes a ‘‘buried’’ Si source, a (Si2)y(GaAs)1-y barrier, and a patterned external source of column III vacancies, an SiO2 cap, to define the layer disordering. This form of Si IILD is...

  • Stable continuous room-temperature laser operation of AlxGa1-xAs-GaAs quantum well heterostructures grown on Si. Nam, D. W.; Holonyak, N.; Hsieh, K. C.; Kaliski, R. W.; Lee, J. W.; Shichijo, H.; Epler, J. E.; Burnham, R. D.; Paoli, T. L. // Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p39 

    Data are presented demonstrating stable room-temperature continuous (cw) photopumped laser operation of an AlxGa1-xAs-GaAs quantum well heterostructure (QWH) grown on Si by a combination of molecular beam epitaxy and metalorganic chemical vapor deposition. The cw 300 K laser operation of the...

  • Spectral and dynamic characteristics of buried-heterostructure single quantum well (Al,Ga)As lasers. Derry, P. L.; Chen, T. R.; Zhuang, Y. H.; Paslaski, J.; Mittelstein, M.; Vahala, K.; Yariv, A. // Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p271 

    We demonstrate that, as predicted, (Al,Ga)As single quantum well (SQW) lasers have substantially narrower spectral linewidths than bulk double-heterostructure lasers. We have observed a further major reduction (>3×) in the linewidth of these SQW lasers when the facet reflectivities are...

  • Mapping of local temperatures on mirrors of GaAs/AlGaAs laser diodes. Brugger, Hans; Epperlein, Peter W. // Applied Physics Letters;3/12/1990, Vol. 56 Issue 11, p1049 

    Spatially resolved Raman scattering measurements (<1 μm) have been performed to determine the surface temperature distribution on coated and uncoated facets of ridge-waveguided GaAs/AlGaAs single quantum well graded-index separate-confinement heterostructure lasers. A strong nonlinear...

  • Long-lived dry-etched AlGaAs/GaAs ridge waveguide laser diodes. Harding, C. M.; Waters, R. G. // Applied Physics Letters;5/28/1990, Vol. 56 Issue 22, p2175 

    Chemically assisted ion beam etching has been utilized to fabricate ridge waveguide GaAs/AlGaAs lasers which are as reliable, if not more so, than their oxide stripe counterparts. Results on 60- and 5-μm-wide ridge waveguide lasers with 600 μm cavity lengths as compared to oxide stripe...

  • Stability of 300 K continuous operation of p-n AlxGa1-xAs-GaAs quantum well lasers grown on Si. Deppe, D. G.; Nam, D. W.; Holonyak, N.; Hsieh, K. C.; Matyi, R. J.; Shichijo, H.; Epler, J. E.; Chung, H. F. // Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1271 

    Data are presented on p-n (diode) AlxGa1-xAs-GaAs quantum well lasers grown on Si indicating that continuous 300 K operation is possible for four or more hours. Lower threshold diodes (1.4 kA/cm2) of given dislocation density are not necessarily as stable as higher threshold diodes (1.8 kA/cm2)...

  • Temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers. Blood, P.; Colak, S.; Kucharska, A. I. // Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p599 

    We have calculated the threshold current and its temperature (T) dependence in the range 200–400 K for AlGaAs quantum well lasers with 25-Å-wide GaAs wells using a model which includes lifetime broadening of the transitions and broadening of the density of states function by...

  • High-frequency modulation of AlGaAs/GaAs lasers grown on Si substrate by molecular beam epitaxy. Chen, H. Z.; Paslaski, J.; Yariv, A.; Morkoç, H. // Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p605 

    We report on the frequency response of quantum well lasers on Si substrates grown by molecular beam epitaxy. Ridge waveguide lasers of 10 μm×380 μm having threshold currents as low as 40 mA were used in this study. Measurements were performed up to a frequency of 4.5 GHz with a...

  • Impurity-disordered, coupled-stripe AlxGa1-xAs-GaAs quantum well laser. Gavrilovic, P.; Meehan, K.; Epler, J. E.; Holonyak, N.; Burnham, R. D.; Thornton, R. L.; Streifer, W. // Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p857 

    Continuous room-temperature operation of impurity-disordered, coupled-stripe Al[sub x]Ga[sub 1-x]As-GaAs quantum well heterostructure lasers is described. Silicon (donor) diffusion at 850 °C is used to produce layer disordering and index guiding, in addition to providing carrier confinement...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics