Low-temperature chemical vapor deposition of SiO2 at 2–10 Torr

Bennett, B. R.; Lorenzo, J. P.; Vaccaro, K.
January 1987
Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p197
Academic Journal
We discuss a new low-pressure and low-temperature process for the chemical vapor deposition (CVD) of silicon dioxide. The process differs from conventional low-pressure CVD in that lower temperatures (150–300 °C) and a unique pressure window (2–10 Torr) provide the conditions for the reaction of silane (SiH4) and oxygen. In this thermal process, activation energies of 0.15–0.18 eV and deposition rates of 100 Å/min at 250 °C are achieved. This technique is approximately 15 times less sensitive to the O2:SiH4 ratio than atmospheric pressure CVD. The deposition conditions are compatible with both low-temperature silicon and III-V technologies. Preliminary current-voltage and capacitance-voltage measurements on Si indicate dielectric field strength of 3–8×106 V/cm and fixed oxide charge density (Qss) less than 1011 cm-2.


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