Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayers

Gunshor, R. L.; Kolodziejski, L. A.; Melloch, M. R.; Vaziri, M.; Choi, C.; Otsuka, N.
January 1987
Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p200
Academic Journal
The heteroepitaxial growth of ZnSe on GaAs epilayers grown by molecular beam epitaxy is found to occur via a two-dimensional growth mechanism. Alternatively, nucleation on a GaAs substrate exhibits three-dimensional growth characteristics. The differentiation of the type of nucleation is evidenced by reflection high-energy electron diffraction intensity oscillations, as well as the dynamic behavior of the diffraction patterns. Photoluminescence measurements of pseudomorphic ZnSe epilayers grown on GaAs epilayers provide a direct measurement of ZnSe deformation potentials.


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