TITLE

Plasma-enhanced metalorganic chemical vapor deposition of GaAs

AUTHOR(S)
Huelsman, A. D.; Reif, R.; Fonstad, C. G.
PUB. DATE
January 1987
SOURCE
Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p206
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High quality specular epilayers of GaAs were grown using a plasma enhanced metalorganic chemical vapor deposition process. The GaAs epilayers were grown from trimethyl gallium and arsine at very low pressures (2–3 Torr) using an rf discharge to dissociate arsine. Specular single-crystal layers of unintentionally doped n-type GaAs were deposited on semi-insulating GaAs substrates both with and without plasma enhancement. The reactor design allowed the group V sources (in this case arsine) to be dissociated by a plasma localized to an area above the substrate. Films deposited with and without an rf plasma had good mobility and photoluminescence, but as the temperature was lowered films deposited with the plasma were better than those deposited without the plasma.
ACCESSION #
9821955

 

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