TITLE

Hydrogenation of boron acceptor in silicon during electron injection by Fowler–Nordheim tunneling

AUTHOR(S)
Chao, Calvin Yi-Ping; Luo, Marie Shiang-Chyong; Pan, Samuel Cheng-Sheng; Sah, Chih-Tang
PUB. DATE
January 1987
SOURCE
Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p180
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hydrogenation of the boron acceptor in silicon is observed during Fowler–Nordheim tunneling injection of electrons for the first time. Experiment is also presented which shows that the existence of free holes at the silicon surface is not important for boron hydrogenation.
ACCESSION #
9821939

 

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