Hydrogenation of boron acceptor in silicon during electron injection by Fowler–Nordheim tunneling

Chao, Calvin Yi-Ping; Luo, Marie Shiang-Chyong; Pan, Samuel Cheng-Sheng; Sah, Chih-Tang
January 1987
Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p180
Academic Journal
Hydrogenation of the boron acceptor in silicon is observed during Fowler–Nordheim tunneling injection of electrons for the first time. Experiment is also presented which shows that the existence of free holes at the silicon surface is not important for boron hydrogenation.


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