Growth kinetics of molecular beam epitaxially grown GaAs/Al0.3Ga0.7As (100) normal and inverted interfaces in thin single quantum well structures examined via photoluminescence studies

Voillot, F.; Madhukar, A.; Tang, W. C.; Thomsen, M.; Kim, J. Y.; Chen, P.
January 1987
Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p194
Academic Journal
The role of the relative surface kinetics of Ga and Al in determining the nature of normal and inverted interfaces defining GaAs/Al0.3Ga0.7As thin single quantum well (SQW) structures is examined via photoluminescence and excitation spectra studies on SQW structures grown under conditions determined by reflection high-energy electron diffraction intensity dynamics to shed specific light on this issue. Results are found to be in conformity with the role of surface kinetics exemplified by computer simulations of growth and underscore the critical importance of controlling both the structural and chemical nature of interfaces via choice of optimized growth conditions.


Related Articles

  • Formation of single-phase MAsx films on GaAs by selective wet-hydrogen oxidation and etching. Weiss, Eliezer; Keller, Robert C.; Helms, C. R. // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2623 

    Reports on a technique which involves the selective oxidation of gallium in water/hydrogen[sub2] mixtures with the reaction of the metal and arsenic to form a metal arsenide compound. Oxidation step; Effect of the large free energy of formation of gallium oxide; Application of the technique for...

  • Native acceptor levels in Ga-rich GaAs. Bugajski, M.; Ko, K. H.; Lagowski, J.; Gatos, H. C. // Journal of Applied Physics;1/15/1989, Vol. 65 Issue 2, p596 

    Studies native acceptor levels in gallium (Ga)-rich gallium arsenide (GaAs). Complex behavior of the acceptor levels in GaAs; Cause of the inhibited formation of double-acceptor Ga defects in p-type crystals; Photoluminescence spectra of thermally annealed Ga-rich crystal.

  • Electrical characterization of GaAs/AlGaAs semiconductor-insulator-semiconductor capacitors and application to the measurement of the GaAs/AlGaAs band-gap discontinuity. Arnold, D.; Ketterson, A.; Henderson, T.; Klem, J.; Morkoç, H. // Journal of Applied Physics;4/15/1985, Vol. 57 Issue 8, p2880 

    Presents a study which conducted electrical measurements on n&sup+; gallium arsenide (GaAs)-(aluminum, gallium) (Al,Ga) arsenic-n&sup-; GaAs and p&sup+; GaAs-(Al,Ga) As-p&sup-; GaAs capacitors. Methodology; Capacitance-voltage characteristics; Current-voltage characteristics.

  • Compositional dependence of the ordering probability in GayIn(1-y)P/GaAs grown by metalorganic chemical vapor deposition. Choi, Won-Jin; Kim, Jong-Seok; Ko, Hyun-Chul; Chung, Ki-Woong; Yoo, Tae-Kyung // Journal of Applied Physics;4/1/1995, Vol. 77 Issue 7, p3111 

    Presents a study which investigated the compositional dependence of the ordering probability in Ga[suby]In[sub(1-y)]P epitaxial layers grown on GaAs substrates. Experimental procedures; Theoretical analysis; Conclusion.

  • Gallium desorption from GaAs and (Al,Ga)As during molecular beam epitaxy growth at high temperatures. Gibson, E. M.; Foxon, C. T.; Zhang, J.; Joyce, B. A. // Applied Physics Letters;9/17/1990, Vol. 57 Issue 12, p1203 

    Direct measurements of the desorption rate of gallium from GaAs and (Al,Ga)As during growth by molecular beam epitaxy at high temperatures have been made by modulated beam mass spectrometry. The activation energy for desorption is dependent upon the nature of the site from which the gallium is...

  • Oxidation and annealing of GaAs (100) studied by photoreflectance. Seebauer, E. G. // Journal of Applied Physics;11/15/1989, Vol. 66 Issue 10, p4963 

    Focuses on a study which described photoreflectance of the clean and air-oxidized gallium-rich gallium arsenide surface. Information on photoreflectance; Methodology of the study; Results and discussion.

  • Low and anisotropic barrier energy for adatom migration on a GaAs (110) surface studied by first-principles calculations. Ishii, Akira; Aisaka, Tsuyoshi; Oh, Ji-Won; Yoshita, Masahiro; Akiyama, Hidefumi // Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4187 

    We determined potential-energy surfaces for Ga and As adatoms on a GaAs (110) surface by first-principles calculations in order to understand the epitaxial growth mechanism. We found small migration barrier energies for Ga and As, which explain the long atom-migration length suggested by...

  • Microscopic study of cluster formation in the Ga on GaAs(001) system. Lowes, T. D.; Zinke-Allmang, M. // Journal of Applied Physics;5/15/1993, Vol. 73 Issue 10, p4937 

    Presents results of a microscopic study of the cluster formation in the gallium on gallium arsenide. Description of volume fractions observed in clusters below the surface level of the surrounding substrate; Description of the thermodynamic model used in the study; Details of the quantitative...

  • Focused-ion-beam-directed nucleation of InAs quantum dots. McKay, H. A.; Dehne, A.; Lee, J. Y.; Millunchick, J. M. // Applied Physics Letters;4/16/2007, Vol. 90 Issue 16, p163109 

    GaAs buffer layers were patterned with Ga+ ions via a focused ion beam and then overgrown with InAs. Atomic force microscopy reveals a strong influence of the ion dose upon subsequent formation of InAs quantum dots. Uniformly dosed areas show an apparent reduction in the critical thickness for...

  • Quantum-well IR detector senses at 0.9 and 10 μm.  // Laser Focus World;May2005, Vol. 41 Issue 5, p9 

    This article reports that researchers at the Naval Postgraduate School and Nanyang Technological University have developed a multiple-quantum-well IR photodetector that is sensitive to two widely disparate wavelength bands, one at 0.9 and the other at 10 micrometer. Detection of the near- and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics