TITLE

Improved surface nitridation of SiO2 thin films in low ammonia pressures

AUTHOR(S)
Ronda, A.; Glachant, A.; Plossu, C.; Balland, B.
PUB. DATE
January 1987
SOURCE
Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p171
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Surface nitridation of thin SiO2 films (130 Å) has been achieved in low ammonia pressures (P≤10-1 mbar) by thermal activation (900 °C≤T≤1050 °C) or by electron-beam-enhanced reaction at room temperature. In the first case, the nitridation rate increases with P, T, and time t; in the latter, it depends on P, t, electron energy and flux, and reaches a maximum within the energy range (1–∼1.7 keV). Electrical characterization of metal-insulator-semiconductor structures shows that the SiO2/Si interfacial quality is not damaged as long as interfacial nitrogen concentration remains negligible. However, bulk and/or interfacial fixed positive charges are detected in the SiO2 films nitrided at room temperature.
ACCESSION #
9821930

 

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