Growth of semi-insulating GaAs crystals with low carbon concentration using pyrolytic boron nitride coated graphite

Inada, Tomoki; Fujii, Takashi; Kikuta, Toshio; Fukuda, Tsuguo
January 1987
Applied Physics Letters;1/19/1987, Vol. 50 Issue 3, p143
Academic Journal
It has been determined that the incorporation of carbon into GaAs crystals grown by the liquid encapsulated Czochralski method occurs as the result of a reaction between the GaAs melt and gaseous oxides of carbon, rather than carbon particles. The incorporation occurs during growth as well as during synthesis. The incorporation of carbon was particularly large when a commercially available large puller was used because of the greater number of carbon components in the hot zone which act as sources. Crystals with a low carbon concentration of 1×1015 cm-3 have been successfully grown by employing pyrolytic boron nitride coated graphite components in the large puller.


Related Articles

  • Identification of a vanadium-related level in liquid encapsulated Czochralski-grown GaAs. Brandt, C. D.; Hennel, A. M.; Pawlowicz, L. M.; Dabkowski, F. P.; Lagowski, J.; Gatos, H. C. // Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p607 

    We present the first positive identification of a vanadium-related electron trap in V-doped GaAs crystals grown by the liquid encapsulated Czochralski technique in pyrolytic boron nitride crucibles. Detailed deep level transient spectroscopy and capacitance transient analysis yielded a trap...

  • Thermal detection of electron spin resonance in the persistent photoconductive state of semi-insulating GaAs crystals grown from pyrolytic BN crucibles. Blazey, K. W.; Schneider, J. // Applied Physics Letters;3/31/1986, Vol. 48 Issue 13, p855 

    Thermally detected electron spin resonance (TDESR) has been applied to paramagnetic defects characteristic of semi-insulating (SI) GaAs crystals grown from pyrolytic boron nitride (pBN) crucibles. A strong isotropic TDESR signal near g=2.2 and two anisotropic lines at higher fields were observed...

  • Carbon in semi-insulating, liquid encapsulated Czochralski GaAs. Hunter, A. T.; Kimura, H.; Baukus, J. P.; Winston, H. V.; Marsh, O. J. // Applied Physics Letters;1984, Vol. 44 Issue 1, p74 

    We have investigated undoped, semi-insulating GaAs, grown by the liquid encapsulated Czochralski technique in pyrolytic BN crucibles. The concentration of carbon, the principal shallow acceptor, depends on the water content of the B2O3 encapsulant. Dry B2O3 (100-150 ppm H2O) results in carbon...

  • Boron Nitride materials.  // Industrial Heating;Apr97, Vol. 64 Issue 4, p65 

    Focuses on the product called Combat Boron Nitride, which is a synthetic ceramic, available in powder, solid, liquid and aerosol spray forms. What applications of these boron nitride powders include; Details on what the aerosol spray consists of.

  • Boron nitride filler seeing greater use. Renstrom, Roger // Plastics News;3/17/1997, Vol. 9 Issue 3, p11 

    Looks at the interest electronic end-users are expressing in thermally conductive boron nitride fillers for polymeric materials. Views of PolarTherm powders' product manager for Advanced Ceramics Corporation; Information on the boron nitride.

  • Effects of MeV ion irradiation of thin cubic boron nitride films. Ullmann, J.; Baglin, J.E.E.; Kellock, A.J. // Journal of Applied Physics;3/15/1998, Vol. 83 Issue 6, p2980 

    Presents a study which aims to investigate the effect of post-deposition treatment by MeV-ion implantation on thin boron nitride films with dominant cubic phase content. Details on the experimental procedures and methods used; Discussion on the results of the study.

  • The effect of substrate orientation on the properties of low temperature molecular beam epitaxial... O'Hagan, S.; Missous, M. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2400 

    Focuses on the results of comparative studies of low temperature growth of gallium arsenide on (100) substrates and on (111)A, (111)B, (311)A, and (311)B surfaces. Reduction of excess As incorporation into layers; Lattice parameter and lower absorption in the near-band-edge; Electrical...

  • Electromodulation reflectance of low temperature grown GaAs. Hsu, T.M.; Sung, J.W.; Lee, W. C. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2603 

    Studies low temperature grown gallium arsenide by electromodulation reflectance spectroscopy. Reflectance spectra; Arsenic antisite defects; Absence of a signal for a rich defect sample.

  • Erratum: "Comparison of efficiencies of GaAs-based pulsed terahertz emitters” [J. Appl. Phys. 101, 116104 (2007)]. Reklaitis, A. // Journal of Applied Physics;Sep2007, Vol. 102 Issue 6, p069901 

    This article presents a correction regarding the comparison of efficiencies of gallium arsenide.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics