TITLE

CdS induced homojunction formation in crystalline p-CuInSe2

AUTHOR(S)
Matson, R. J.; Noufi, R.; Bachmann, K. J.; Cahen, D.
PUB. DATE
January 1987
SOURCE
Applied Physics Letters;1/19/1987, Vol. 50 Issue 3, p158
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The deposition of CdS onto single-crystal p-CuInSe2 (at a substrate temperature of 200 °C) results in a CuInSe2 homojunction rather than the expected heterojunction. Junction depths, varying from 1 to 9 μm, correlated well with the free-carrier concentration of the sample crystals. The junction depths were measured by electron-beam-induced current line scans of cleaved junctions and were corroborated by quantum efficiency measurements. All the materials deposited to date (CdS, Cd, Au, and Mo) have resulted in type conversion of the CuInSe2. The experimental evidence for this type conversion is presented and possible defect chemical origins identified.
ACCESSION #
9821907

 

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