Bias-dependent photoresponse of p+in GaAs/AlAs/GaAs diodes

Melloch, M. R.; McMahon, C. P.; Lundstrom, M. S.; Cooper, J. A.; Qian, Q-D.; Bandyopadhyay, S.
January 1987
Applied Physics Letters;1/19/1987, Vol. 50 Issue 3, p161
Academic Journal
We report photocollection efficiency measurements of p+in GaAs/AlAs/GaAs diodes fabricated on films grown by molecular beam epitaxy. Both the zero-bias and bias-dependent photocollection characteristics can be explained by assuming that the band discontinuity between AlAs and GaAs is mostly accommodated in the valence band.


Related Articles

  • Molecular beam epitaxial growth of CdZnS using elemental sources. Wu, B.J.; Cheng, H.; Guha, S.; Haase, M.A.; De Puydt, J.M.; Meis-Haugen, G.; Qiu, J. // Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2935 

    Examines the growth of Cd[sub 1-x]Zn[sub x]S diodes on gallium arsenide substrates by molecular beam epitaxy using elemental zinc, cadmium, and sulfur sources. Analysis of the incorporation competition between cadmium and zinc under different sulfur flux conditions; Sulfur etching of the GaAs...

  • Use of nonstoichiometry to form GaAs tunnel junctions. Ahmed, S.; Melloch, M.R. // Applied Physics Letters;12/22/1997, Vol. 71 Issue 25, p3667 

    Investigates the formation of a tunnel diode from gallium arsenide containing excess arsenic incorporated by molecular beam epitaxy at reduced substrate temperature. Improvement of dopant incorporation; Determination of the peak current density of the resulting tunnel junction; Calculation of...

  • Interband resonant tunneling diode in δ-doped GaAs. Wang, Y. H. // Applied Physics Letters;10/8/1990, Vol. 57 Issue 15, p1546 

    Novel negative differential resistance (NDR) diodes, suggesting interband resonant tunneling diodes, in δ-doped GaAs prepared by molecular beam epitaxy are demonstrated. Two Si and one Be δ-doped planes were inserted in the GaAs layer, i.e., n+-δn+-i-δp+-i-δn+-n+, to form the...

  • High-resistivity GaAs grown by high-temperature molecular-beam epitaxy. Polyakov, A. Y.; Stam, M.; Milnes, A. G.; Wilson, R. G.; Fang, Z. Q. // Journal of Applied Physics;8/15/1992, Vol. 72 Issue 4, p1320 

    Investigates the high-resistivity of gallium arsenide layers grown by molecular beam epitaxy. Information on the experimental approach; Origin of the high resistivity of gallium arsenide layers; Comparison of the photosensitivity of an Au/i-GaAs/n-GaAs diode .

  • High-power (2.2 W) cw operation of (111)-oriented GaAs/AlGaAs single-quantum-well lasers prepared by molecular-beam epitaxy. Hayakawa, T.; Suyama, T.; Kondo, M.; Hosoda, M.; Yamamoto, S.; Hijikata, T. // Journal of Applied Physics;9/1/1988, Vol. 64 Issue 5, p2764 

    Examines high-power cw operation in a (111)-oriented gallium arsenide/AlGaAs single-quantum-well lasers prepared by molecular beam epitaxy (MBE). Elimination of the slip line defects in the MBE-grown wafers; Layer sequence of laser diodes; Output-current characteristics of the devices with the...

  • High-Power Low-Threshold Laser Diodes (λ = 0.94 μm) Based on MBE-Grown In[sub 0.1]Ga[sub 0.9]As/AlGaAs/GaAs Heterostructures. Aleksandrov, S. B.; Alekseev, A. N.; Demidov, D. M.; Dudin, A. L.; Katsavets, N. I.; Kogan, I. V.; Pogorel’skiı, Yu. V.; Ter-Martirosyan, A. L.; Sokolov, É. G.; Chaly, V. P.; Shkurko, A. P. // Technical Physics Letters;Aug2002, Vol. 28 Issue 8, p696 

    The parameters of high-power laser diodes operating at λ = 0.94 µm, based on MBE-grown In[sup 0.1]Ga[sub 0.9]As/AlGaAs/GaAs quantum-dimensional heterostructures, are reported. The laser diodes manufactured using an optimized MBE technology and specially selected dopant profiles are...

  • 1550 nm GaInNAsSb distributed feedback laser diodes on GaAs. Gupta, J. A.; Barrios, P. J.; Aers, G. C.; Lapointe, J. // Electronics Letters;4/24/2008, Vol. 44 Issue 9, p578 

    Singlemode laser diodes on GaAs substrates were developed using GaInNAsSb double quantum well active regions grown by molecular beam epitaxy. The distributed feedback devices were fabricated using a regrowth-free process in which lateral Cr gratings were deposited adjacent to a dry-etched narrow...

  • Al/Si/AlGaAs/GaAs Schottky barriers by molecular beam epitaxy. Miller, T.J.; Nathan, M.I. // Applied Physics Letters;11/9/1992, Vol. 61 Issue 19, p2332 

    Examines the growth of aluminum/silicon/aluminum gallium arsenide/gallium arsenide Schottky diode structures by molecular beam epitaxy. Determination of barrier height behavior as a function of aluminum mole fraction; Fabrication of aluminum dots on the surface; Effect of the conduction band...

  • Time response analysis of ZnSe-based Schottky barrier photodetectors. Monroy, E.; Vigué, F.; Calle, F.; Izpura, J. I.; Mun˜oz, E.; Faurie, J.-P. // Applied Physics Letters;10/23/2000, Vol. 77 Issue 17 

    We report on the characterization of ZnSe- and ZnMgBeSe-based Schottky barrier photodetectors grown on semi-insulating GaAs(001) by molecular-beam epitaxy. The spectral response of the devices shows a very sharp cutoff at variable wavelength, determined by the alloy composition, with a large...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics