Order-disorder transformation in ternary tetrahedral semiconductors

Zunger, Alex
January 1987
Applied Physics Letters;1/19/1987, Vol. 50 Issue 3, p164
Academic Journal
The recently discovered order-disorder transformations in pseudobinary semiconductor alloys AxB1-xC are shown to belong to a broader class of such transformations in AnB4-nC4 semiconducting compounds (e.g., chalcopyrites, for n=2). Strain energy, set up by the atomic size mismatch between the A–C and B–C bonds, is shown to control the nature of the state of order in chalcopyrites and pseudobinary alloys alike. These considerations lead to a classification of all bulk tetrahedral semiconductors into four classes of order-disorder characteristics.


Related Articles

  • Phase Equilibria in Binary and Ternary Systems with Chemical and Magnetic Ordering. Witusiewicz, V. T.; Bondar, A. A.; Hecht, U.; Velikanova, T. Y. // Journal of Phase Equilibria & Diffusion;Aug2011, Vol. 32 Issue 4, p329 

    Univariant and invariant phase equilibria for systems that display second-order transformations such as chemical and magnetic ordering are arranged consistently aiming to construct complete Scheil's reaction schemes. For this purpose it is assumed that univariant phase boundaries representing...

  • Effect of Ternary Additions on the Stability of Ordered Phases in Ni-Mo Alloys—Transmission Electron Microscopy Results and First Principles Calculations. Arya, A.; Kulkarni, U. D.; Dey, G. K.; Banerjee, S. // Metallurgical & Materials Transactions. Part A;Jul2008, Vol. 39 Issue 7, p1623 

    The ordering behavior of a Ni-Mo alloy in the presence of ternary additives X (X = Al, Cr, Mn, V) has been studied using transmission electron microscopy (TEM) as well as first-principles calculations using the tight-binding–linear muffin tin orbital (TB-LMTO) method. The sequence of...

  • Thermoactivated structure rearrangements in a binary CuAu alloy under deviation from stoichiometry. Potekaev, A.; Dudnik, E.; Starostenkov, M.; Kulagina, V.; Myasnichenko, V. // Russian Physics Journal;Aug2010, Vol. 53 Issue 3, p213 

    Thermoactivated structure rearrangements of a binary CuAu alloy at the micro-, meso-, and macrolevels are investigated under deviation from stoichiometry. Mechanisms of these rearrangements at the micro-, meso-, and macrolevels are identified.

  • Raman analysis of the configurational disorder in Al[sub x]Ga[sub 1] [sub x]N films. Bergman, Leah; Bremser, Michael D. // Applied Physics Letters;10/13/1997, Vol. 71 Issue 15, p2157 

    Presents a Raman analysis of the configurational disorder in Al[sub x]Ga[sub 1] [sub x]N semiconductor films. Exhibition of significant asymmetry and broadening toward the high energy range; Discussion on the spatial correlation model; Presence of a random disordered alloy system.

  • Two-dimensional ordering of self-assembled Ge islands on vicinal Si(001) surfaces with regular ripples. Zhu, Jian-hong; Brunner, K.; Abstreiter, G. // Applied Physics Letters;8/3/1998, Vol. 73 Issue 5 

    Two-dimensional ordering is achieved in a single layer of self-assembled Ge islands fabricated by molecular beam epitaxy on vicinal Si(001) surfaces with regular ripples caused by step bunching. The ripples with a typical period of about 120 nm lead to the long-range lineup of the Ge islands...

  • Understanding of martensitic (TiCu)-based bulk metallic glasses through deformation behavior of a binary Ti50Cu50 martensitic alloy. Kim, K. B.; Song, K. A.; Zhang, X. F.; Yi, S. // Applied Physics Letters;6/16/2008, Vol. 92 Issue 24, p241915 

    A binary Ti50Cu50 martensitic alloy having similar atomic clusters to (TiCu)-based martensitic bulk metallic glasses presents a large plastic strain of 18.04% with high fracture strength of 1705 MPa. Detailed microstructural investigations point out that martensite embedded in γ-TiCu matrix...

  • retraction: Metal-insulator transition in chains with correlated disorder. Carpena, Pedro; Bernaola-Galvan, Pedro; Ivanov, Plamen Ch.; Stanley, H. Eugene // Nature;2/13/2003, Vol. 421 Issue 6924, p764 

    Retracts the claim of a study of metal-insulator transition in the infinite binary chain with correlated disorder. Numerical simulations of one-dimensional disordered binary systems; Consequence of the algorithm used to generate long-range correlations in binary chains.

  • Effect of faceting on the band gap of ordered GaInP. Friedman, D.J.; Horner, G.S. // Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p878 

    Examines the effect of faceting on the band gap of pseudobinary semiconductor alloy gallium indium phosphide. Application of organometallic vapor phase epitaxy; Comparison of the surface band gap value of varying epilayer thickness; Dependence of band gap lowering on growth conditions and...

  • Atomic layer epitaxy of CdTe and MnTe. Hartmann, J. M.; Feuillet, G.; Charleux, M.; Mariette, H. // Journal of Applied Physics;3/15/1996, Vol. 79 Issue 6, p3035 

    Focuses on a study which investigated atomic deposition techniques for binary semiconductors of the telluride family, CdTe and MnTe. Background to the study; Experimental details; Results and discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics