InGaAsP/InP optical switches using carrier induced refractive index change

Ishida, K.; Nakamura, H.; Matsumura, H.; Kadoi, T.; Inoue, H.
January 1987
Applied Physics Letters;1/19/1987, Vol. 50 Issue 3, p141
Academic Journal
InGaAsP/InP optical switches have been fabricated which use a carrier induced refractive index change. Switching has been achieved with a power isolation of 20.5 dB in a 1-mm-long device in multimode operation. This is a promising new step toward making optical integrated circuits.


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