Technique for the direct synthesis and growth of indium phosphide by the liquid phosphorus encapsulated Czochralski method

Inada, Tomoki; Fujii, Takashi; Eguchi, Minoru; Fukuda, Tsuguo
January 1987
Applied Physics Letters;1/12/1987, Vol. 50 Issue 2, p86
Academic Journal
The direct synthesis and growth of InP have been successfully performed by the newly developed liquid P encapsulated Czochralski technique. We have developed a way to use liquid P both as a source element for the synthesis instead of P gas, and also as an ‘‘encapsulant’’ for the Czochralski growth instead of B2O3. The existence of two distinct layers, liquid P and molten InP, has been discovered during the process. Grown single crystals showed a carrier concentration of as low as 5×1015 cm-3.


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