TITLE

Nitrogen implantation for local inhibition of oxidation

AUTHOR(S)
Berruyer, Pascale; Bruel, Michel
PUB. DATE
January 1987
SOURCE
Applied Physics Letters;1/12/1987, Vol. 50 Issue 2, p89
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nitrogen implantation for local oxidation is a way of forming a silicon nitride film directly sealed to the silicon surface. (N2)+ implantation in silicon was performed through a thin film of oxide at low energy (10–40 keV) and high dose (1016–1017 at/cm2). Oxidation resistance as a function of dose and energy was investigated using step height measurements. Forming a layer which was an efficient oxidation mask required a minimum dose at a given energy. For a (N2)+ implant energy of 20, 25, and 40 keV the minimum doses are respectively 5×1016, 6.5×1016, and 7×1016 at/cm2. In addition the layers formed at a dose of 1017 at/cm2 and a (N2)+ energy above 55 keV do not put up a complete oxidation resistance. Using these results, simple devices were developed in order to examine the profile of the transition region between field oxide and implanted area. It turned out that the length of this region (commonly known as the bird’s beak) is largely reduced. A length of 50 nm was obtained for an oxide thickness of 550 nm. The ratio of the bird’s beak length to field oxide was less than 0.1.
ACCESSION #
9821863

 

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