Electroluminescence from the base of a GaAs/AlGaAs double heterojunction bipolar transistor

Levi, A. F. J.; Hayes, J. R.; Gossard, A. C.; English, J. H.
January 1987
Applied Physics Letters;1/12/1987, Vol. 50 Issue 2, p98
Academic Journal
We have measured the electroluminescence spectrum of a double heterojunction bipolar transistor and found that a potential well formed at the base-collector junction acts as a preferential trap of low-energy electrons in the base. At high injection current densities the trap saturates. The subsequent buildup of carriers in the base changes the transistor turn-on characteristics.


Related Articles

  • GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy. Fischer, R.; Chand, N.; Kopp, W.; Morkoç, H.; Erickson, L. P.; Youngman, R. // Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p397 

    We have investigated the properties of GaAs homojunction bipolar transistors grown on (100) oriented Si substrates by molecular beam epitaxy. In a structure with a base thickness of 0.2 µm, a small-signal common emitter current gain fi of about 10 at a current density of 10 kA/cm² has been...

  • High-field transport in GaAs transistors. Berthold, K.; Levi, A. F. J.; Walker, J.; Malik, R. J. // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p813 

    Resonant tunneling is used to explore the dynamics of electron transport in the electric field of reverse-biased GaAs n-p-n heterojunction bipolar transistor collectors. Extreme velocity overshoot is observed in a fraction of a percent of electrons which are accelerated ballistically in the...

  • Over 40 Gbit/s 16:1 multiplexer IC using InP/InGaAs HBT technology. Ishii, K.; Nakajima, H.; Nosaka, H.; Ida, M.; Kurishima, K.; Yamahata, S.; Enoki, T.; Shibata, T. // Electronics Letters;6/12/2003, Vol. 39 Issue 12, p911 

    A low-power 16:1 multiplexer (MUX) IC using undoped-emitter InP/InGaAs heterojunction bipolar transistors (HBTs) has been successfully designed and fabricated. To minimise power consumption, the collector current density of each HBT was optimised taking into account the required operating speed...

  • Interactions between implanted Mg and base p-type dopant (Be,Zn,C) in heterojunction bipolar transistor devices. Amarger, V.; Dubon-Chevallier, C.; Gao, Y.; Descouts, B. // Journal of Applied Physics;6/1/1992, Vol. 71 Issue 11, p5694 

    Presents a study which examined the interactions between implanted magnesium and base p-type dopant in gallium aluminum arsenide/gallium arsenide heterojunction bipolar transistor structures. Investigation of different diffusion behaviors; Experimental conditions; Results and discussion.

  • SSH and SHH GaInP/GaAs HBT divide-by-3 prescalers with true 50% duty cycle. Tseng, S.C.; Meng, C.C.; Chen, W.Y. // Electronics Letters;7/6/2006, Vol. 42 Issue 14, p796 

    Two 50% duty cycle divide-by-3 prescalers – sample-sample-hold (SSH) and sample-hold-hold (SHH) prescalers – in the 2 µm GaInP/GaAs heterojunction bipolar transistor (HBT) technology are realised. Current switchable emitter couple logic D flip-flops are employed to form both...

  • InP/InGaAs double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy with sulfur delta doping in the collector region. Tokumitsu, E.; Dentai, A. G.; Joyner, C. H.; Chandrasekhar, S. // Applied Physics Letters;12/24/1990, Vol. 57 Issue 26, p2841 

    Sulfur δ doping in InP by metalorganic vapor phase epitaxy is reported. A peak carrier concentration of 7×1017 cm-3 with a full width at half maximum of 30 nm has been measured by the electrochemical capacitance-voltage technique. It is shown that by inserting the δ-doping spike in the...

  • Vertical monolithic integration of a GaAs/AlGaAs V-channeled substrate inner stripe laser diode and a heterojunction bipolar transistor. Jan, Yu-Heng; Lee, Si-Chen // Applied Physics Letters;12/24/1990, Vol. 57 Issue 26, p2750 

    A GaAs/AlGaAs V-channeled substrate inner stripe laser diode has been successfully integrated with a GaAs/AlGaAs heterojunction bipolar transistor in a vertical configuration for the first time. An ‘‘effective’’ threshold current (base current) as low as 8 mA was...

  • Carbon doping for AlGaAs/GaAs heterojunction bipolar transistors by molecular-beam epitaxy. Ito, Hiroshi; Nakajima, Osaake; Ishibashi, Tadao // Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2099 

    Investigates AlGaAs/GaAs heterojunction bipolar transistors carbon doping through molecular-beam epitaxy. Increase in proportion of inactive carbon atoms in GaAs layers; Dependence of mobility on free-carrier concentration; Evaluation of the behavior of carbon dopant in the GaAs layer.

  • Suppression of emitter size effect on the current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors. Mohammad, S. Noor; Chen, J.; Chyi, J.-I.; Morkoç, H. // Applied Physics Letters;3/5/1990, Vol. 56 Issue 10, p937 

    The effect of emitter periphery-to-area ratio on the current-voltage characteristics of Npn AlGaAs/GaAs heterojunction bipolar transistors has been studied. It is shown that an electric field generated by a properly controlled nonuniform doping of the base region can very significantly suppress...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics