TITLE

Electroluminescence from the base of a GaAs/AlGaAs double heterojunction bipolar transistor

AUTHOR(S)
Levi, A. F. J.; Hayes, J. R.; Gossard, A. C.; English, J. H.
PUB. DATE
January 1987
SOURCE
Applied Physics Letters;1/12/1987, Vol. 50 Issue 2, p98
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have measured the electroluminescence spectrum of a double heterojunction bipolar transistor and found that a potential well formed at the base-collector junction acts as a preferential trap of low-energy electrons in the base. At high injection current densities the trap saturates. The subsequent buildup of carriers in the base changes the transistor turn-on characteristics.
ACCESSION #
9821857

 

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