Thickness dependence of oxide breakdown under high field and current stress

Liang, M.-S.; Choi, J. Y.
January 1987
Applied Physics Letters;1/12/1987, Vol. 50 Issue 2, p104
Academic Journal
The integrity of gate oxides is shown to be a strong function of both oxide thickness and applied field and current strength. Thin gate oxides show longer lifetime under low field and current stress. However, high field and current induced intrinsic breakdown is inversely proportional to oxide thickness. It is also found that the effect of polycrystalline silicon and silicon dioxide interface roughness on oxide charge-to-breakdown is independent of oxide thickness and stressing field and current level. A model of positive charge generation and recombination is applied to explain the experimental data.


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