TITLE

Experimental determination of the edge depletion width of ahe two-dimensional electron gas in GaAs/AlxGa1-xAs

AUTHOR(S)
Choi, K. K.; Tsui, D. C.; Alavi, K.
PUB. DATE
January 1987
SOURCE
Applied Physics Letters;1/12/1987, Vol. 50 Issue 2, p110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new method based on one-dimensional localization theory is introduced to determine the width of the two-dimensional electron gas (2DEG) in narrow conducting channels of GaAs/AlxGa1-xAs heterojunctions. The edge depletion width of the 2DEG, measured by the difference between this width and the metallurgical width of the channel, is ∼0.5 μm±0.2 μm for a 2DEG density ns=1.5×1011/cm2.
ACCESSION #
9821849

 

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