Polarization switching in semiconductor lasers driven via injection from an external radiation

Sapia, A.; Spano, P.; Daino, B.
January 1987
Applied Physics Letters;1/12/1987, Vol. 50 Issue 2, p57
Academic Journal
Switching between transverse electric (TE) and transverse magnetic (TM) polarization states in the output from a semiconductor laser is experimentally obtained through injection locking from an external TM polarized radiation. Switching, which is connected to the loss reduction of the TM modes caused by the injection-locking mechanism, is faster than a few nanoseconds, the resolution limit of our apparatus.


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