Mesotaxy: Single-crystal growth of buried CoSi2 layers

White, Alice E.; Short, K. T.; Dynes, R. C.; Garno, J. P.; Gibson, J. M.
January 1987
Applied Physics Letters;1/12/1987, Vol. 50 Issue 2, p95
Academic Journal
Buried single-crystal CoSi2 layers in silicon have been formed by high dose implantation of cobalt followed by annealing. These layers grow in both the (100) and (111) orientations—those in (111) have better crystallinity, but those in (100) are of higher electrical quality. Electrical transport measurements on the layers give values for the resistance ratios and superconducting critical temperatures that are better than the best films grown by conventional techniques and comparable to bulk CoSi2.


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