Erbium doping of molecular beam epitaxial GaAs

Smith, R. S.; Müller, H. D.; Ennen, H.; Wennekers, P.; Maier, M.
January 1987
Applied Physics Letters;1/5/1987, Vol. 50 Issue 1, p49
Academic Journal
The doping of molecular beam epitaxial GaAs with erbium up to a concentration of 2×1019 cm-3 has been successfully demonstrated. Up to a concentration of about 5×1018 cm-3 the surface morphology remained good but for higher doping levels the surface became structured. Hall and profile measurements indicate that erbium doping gives rise to a trapping level capable of compensating silicon-doped layers. For the first time photoluminescence from a rare earth element incorporated in a III-V semiconductor has been observed at room temperature.


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