Electron beam pumped lasing in ZnSe grown by molecular beam epitaxy

Potts, J. E.; Smith, T. L.; Cheng, H.
January 1987
Applied Physics Letters;1/5/1987, Vol. 50 Issue 1, p7
Academic Journal
We report the first observations of lasing action in electron beam pumped ZnSe grown by molecular beam epitaxy on (100) GaAs substrates. In spite of the small thicknesses (approximately 2 μm) of the films used, lasing thresholds as low as 3.9 A/cm2 have been measured at an accelerating voltage of 20 kV when the (nominal) sample temperature was 15 K. Threshold currents increased for sample temperatures greater than 100 K, and for accelerating voltages both less than and greater than 20 kV.


Related Articles

  • Surface preparation effect of GaAs(110) substrates on the ZnSe epitaxial layer grown by molecular beam epitaxy. Ko, H.-C.; Kim, Y.-S.; Kim, C.-O. // Applied Physics A: Materials Science & Processing;1999, Vol. 68 Issue 6, p627 

    Abstract. The effect of the surface preparation of the GaAs(110) substrate on the ZnSe epitaxial layer grown by molecular beam epitaxy (MBE) was investigated by means of etch-pit density (EPD) measurements, surface morphology observation, and reflection high-energy electron diffraction (RHEED)...

  • Photoassisted metalorganic molecular beam epitaxy of ZnSe. Coronado, C.A.; Ho, E. // Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p534 

    Examines the photoassisted heteroepitaxy of zinc selenide (ZnSe) on gallium arsenide (GaAS) by molecular beam epitaxy. Use of diethylselenium in ZnSe heteroepitaxy; Dependence of ZnSe growth rate on substrate temperature; Involvement of electron/hole pairs in surface chemistry.

  • Dominant intrinsic-exciton related luminescence from ZnSe grown by molecular beam epitaxy. Park, R. M.; Mar, H. A.; Salansky, N. M. // Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p386 

    ZnSe layers were grown by molecular beam epitaxy onto (100) oriented GaAs substrates using various incident Zn/Se flux ratios. Substrate temperatures were varied over the range 300-400 °C while the layer growth rate was maintained at about 0.1 µm/h. 4.2-K photoluminescence (PL) spectra...

  • Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayers. Gunshor, R. L.; Kolodziejski, L. A.; Melloch, M. R.; Vaziri, M.; Choi, C.; Otsuka, N. // Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p200 

    The heteroepitaxial growth of ZnSe on GaAs epilayers grown by molecular beam epitaxy is found to occur via a two-dimensional growth mechanism. Alternatively, nucleation on a GaAs substrate exhibits three-dimensional growth characteristics. The differentiation of the type of nucleation is...

  • Se species in metalorganic molecular beam epitaxy of ZnSe. Qiu, Y.; el-Emawy, A.A.; Osinsky, A.; Littlefield, E.; Temkin, H. // Applied Physics Letters;6/3/1996, Vol. 68 Issue 23, p3311 

    Analyzes the growth of zinc selenide on gallium arsenide by metalorganic molecular beam epitaxy. Decomposition of dimethylselenide; Atomic Se as the dominant group VI species; Observation on the sticking probability of zinc to atomic Se.

  • Evidence of strong effect from the interface on the electrical characteristics of ZnSe/GaAs... Seghier, D.; Hauksson, I.S. // Journal of Applied Physics;4/1/1999, Vol. 85 Issue 7, p3721 

    Studies the interface properties of zinc selenide/gallium arsenide heterojunctions by molecular beam epitaxy. Use of current-voltage and capacitance-voltage measurements and admittance spectroscopy in the study; Analysis of capacitance versus frequency data; Experimental results.

  • dc and ac transport in molecular-beam-epitaxy-grown metal/ZnSe/GaAs heterojunction structures. Marshall, T.; Colak, S.; Cammack, D. // Journal of Applied Physics;8/15/1989, Vol. 66 Issue 4, p1753 

    Examines the room-temperature electrical transport properties of zinc selenide (ZnSe) epilayers grown above the critical layer thickness on n-gallium arsenide substrates. Application of molecular beam epitaxy; Findings of the direct current versus voltage measurements; Variation of the...

  • Comparative optical investigations of ZnSe/GaAs epilayers grown by molecular beam and hot-wall epitaxy. Kudlek, G.; Presser, N.; Gutowski, J.; Hingerl, K.; Sitter, H.; Durbin, S. M.; Menke, D. R.; Kobayashi, M.; Gunshor, R. L. // Journal of Applied Physics;12/1/1990, Vol. 68 Issue 11, p5630 

    Presents comparative optical investigations on zinc selenide (ZnSe)/gallium arsenide (GaAs) epilayers grown by molecular beam epitaxy (MBE) and hot-wall epitaxy (HWE). Information on a reliable means of analyzing the dominant impurity-related excitonic transitions in ZnSe epilayers; Comparison...

  • Nitrogen-doped ZnSe grown on 4 degree-misoriented GaAs(100) and GaAs(211) by molecular beam epitaxy. Ziqiang Zhu; Ebisutani, Takashi // Applied Physics Letters;4/4/1994, Vol. 64 Issue 14, p1833 

    Presents the growth of nitrogen (N)-doped zinc selenide (ZnSe) on gallium arsenide (GaAs) by molecular beam epitaxy. Effects of surface steps on N-associated deep donors; Suppression of deep donors in ZnSe by the misoriented GaAs surface; Limitation of N by single-dangling bond at Zn sites.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics