Faulted dipoles in GaAs

De Cooman, B. C.; Carter, C. B.
January 1987
Applied Physics Letters;1/5/1987, Vol. 50 Issue 1, p40
Academic Journal
Faulted dipoles in GaAs have been directly imaged by high-resolution transmission electron microscopy. The dislocation dipoles were introduced into the GaAs by deforming a sample in compression along a <110> axis. Both the Z character of the dipole and the intrinsic nature of the stacking faults could be determined directly from the high-resolution images. Using convergent-beam electron diffraction, it has been shown that it is possible to determine the polarity of the sample and thereby to differentiate between the α and β partial dislocations.


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