TITLE

Electron population factor in light enhanced oxidation of silicon

AUTHOR(S)
Young, E. M.; Tiller, William A.
PUB. DATE
January 1987
SOURCE
Applied Physics Letters;1/5/1987, Vol. 50 Issue 1, p46
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electrons in the electron/hole creation event are shown to be the prime catalytic agent in photon-stimulated oxidation enhancement of silicon. Oxidation enhancement in the 10–50% range occurs at only moderate power density levels of visible wavelength light and increases greatly for photon energies just exceeding the conduction-band edge between SiO2 and Si. ‘‘Hot’’-electron injection into the SiO2 is thought to enhance the oxidation via a process of electron attachment to some of the in-diffusing O2 species, with subsequent dissociation into O and O- species. This injected hot-electron flux reaction with O2 is thought to also occur at a reduced level during standard thermal oxidation.
ACCESSION #
9821779

 

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