TITLE

Epitaxial growth of NiSi2 on ion-implanted silicon at 250–280 °C

AUTHOR(S)
Lu, S. W.; Nieh, C. W.; Chen, L. J.
PUB. DATE
December 1986
SOURCE
Applied Physics Letters;12/29/1986, Vol. 49 Issue 26, p1770
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Striking effects of dopant atoms on the formation of Ni silicides were observed. Epitaxial NiSi2 was found to grow on both BF+2- and B+-implanted (001) and (111)Si at 250–280 °C. The formation of Ni2Si was suppressed. It is conjectured that the presence of dopant atoms may lower the activation energy substantially to promote the formation of epitaxial NiSi2 at low temperatures. The effects may be exploited to grow other epitaxial silicides on silicon at low temperatures.
ACCESSION #
9821775

 

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