Indium exodiffusion in annealed GaAs:In crystals

Krawczyk, S. K.; Khoukh, A.; Olier, R.; Chabli, A.; Molva, E.
December 1986
Applied Physics Letters;12/29/1986, Vol. 49 Issue 26, p1776
Academic Journal
In this work, we report on the effect of annealing on the distribution of indium in the surface region of In-alloyed GaAs crystals. Auger, secondary ion mass spectroscopy, and photoluminescence were used as the analytical tools. It is shown that In migrates and piles up over a depth of several tens or a few hundreds of angstroms from the surface leaving behind an In-depleted region. The In redistribution results in modifications of the band gap in the surface region of annealed GaAs:In substrates; these modifications take place even at temperatures as low as 400 °C.


Related Articles

  • Effects of indium lattice hardening upon the growth and structural properties of large-diameter, semi-insulating GaAs crystals. McGuigan, S.; Thomas, R. N.; Barrett, D. L.; Hobgood, H. M.; Swanson, B. W. // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1377 

    The high-pressure liquid encapsulated Czochralski growth of indium lattice-hardened GaAs, from 3 kg melts, has resulted in low-dislocation, large-diameter crystals which exhibit thermally stable, semi-insulating properties. Post-growth boule annealing is found to be an effective stress-relief...

  • Dynamic characteristics of dislocations in indium-doped gallium arsenide crystal. Yonenaga, Ichiro; Sumino, Koji; Yamada, Koji // Applied Physics Letters;2/3/1986, Vol. 48 Issue 5, p326 

    Characteristics in the motion of dislocations generated from scratches in GaAs doped with In at a concentration of 2×1020 atoms/cm3 are investigated and are compared with those in undoped GaAs. α dislocations in In-doped GaAs are found to be immovable under stress lower than 10 MPa in the...

  • The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si. Knall, J.; Romano, L. T.; Biegelsen, D. K.; Bringans, R. D.; Chui, H. C.; Harris, J. S.; Treat, D. W.; Bour, D. P. // Journal of Applied Physics;9/1/1994, Vol. 76 Issue 5, p2697 

    Deals with a study which investigated threading dislocation removal from gallium arsenide films on silicon by introduction of additional indium gallium arsenide graded strain layers in combination with growth on patterned substrates. Experiment; Analysis of the dislocation structure using...

  • High-mobility InSb epitaxial films grown on a GaAs (001) substrate using liquid-phase epitaxy. Dixit, V. K.; Bansal, Bhavtosh; Venkataraman, V.; Bhat, H. L.; Subbanna, G. N.; Chandrasekharan, K. S.; Arora, B. M. // Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2102 

    The growth of epitaxial InSb layers on highly lattice-mismatched semi-insulating GaAs substrates has been achieved via traditional liquid-phase epitaxy. Scanning and transmission electron microscopy show sharp interfaces even at 35 nm resolution. High-resolution x-ray diffraction studies reveal...

  • The yield point of In-doped GaAs between 500 and 900 °C. Siethoff, Hans; Brion, Hans Georg; Völkl, Johannes // Journal of Applied Physics;7/1/1993, Vol. 74 Issue 1, p153 

    Presents a study that discussed the deformation properties of indium-doped gallium arsenide (GaAs). Types of interaction between dislocations and impurities; Difference between doped and undoped material; Terms in which GaAs single crystals were interpreted; Preparation of the GaAs single crystals.

  • Near-resonance acousto-optical interactions in GaAs and InP. Renosi, P.; Sapriel, J. // Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2794 

    Investigates the acousto-optical properties of gallium arsenide and indium phosphide crystals. Determination of photoelastic constants for photon energies; Use of a lithium niobate piezoelectric transducer to produce ultrasound in pulse form; Characteristics of acoustic propagation in optical...

  • InAs nanowires and whiskers grown by reaction of indium with GaAs. He, Maoqi; Fahmi, M. M. E.; Mohammad, S. Noor; Jacobs, Randolph N.; Salamanca-Riba, Lourdes; Felt, Frederick; Jah, Muzar; Sharma, Ashok; Lakins, Darryl // Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3749 

    Free-standing InAs nanowires and whiskers were grown employing reaction of indium (In) liquid and vapor with GaAs substrate. The arsenic (As) atoms resulting from this reaction were transported by a flow of N[sub 2] or NH[sub 3] to the growth location where they reacted with In to produce InAs...

  • Effect of substrate temperature on the growth rate and surface morphology of heteroepitaxial indium antimonide layers grown on (100) GaAs by metalorganic magnetron sputtering. Rao, T. Sudersena; Halpin, C.; Webb, J. B.; Noad, J. P.; McCaffrey, J. // Journal of Applied Physics;1/15/1989, Vol. 65 Issue 2, p585 

    Discusses the effect of substrate temperature on the growth rate and surface morphology of heteroepitaxial indium antimonide (InSb) layers grown on gallium arsenide (GaAs) by metalorganic magnetron sputtering. Dependence of the surface morphology on growth temperature; Nature of the...

  • Crystallinity of InGaPAs epitaxial layers revealed in equal thickness fringes in transmission electron microscopy. Kondow, Masahiko; Kakibayashi, Hiroshi; Nishino, Taneo; Hamakawa, Yoshihiro // Journal of Applied Physics;4/1/1989, Vol. 65 Issue 7, p2699 

    Presents a study that examined the crystallinity of InGaPAs layers grown on gallium arsenide substrates by liquid phase epitaxy. Evaluation of the images from the composition analysis by thickness fringe technique; Influence of immiscibility on the fringe irregularity of the epitaxial layers;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics