TITLE

Indium exodiffusion in annealed GaAs:In crystals

AUTHOR(S)
Krawczyk, S. K.; Khoukh, A.; Olier, R.; Chabli, A.; Molva, E.
PUB. DATE
December 1986
SOURCE
Applied Physics Letters;12/29/1986, Vol. 49 Issue 26, p1776
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this work, we report on the effect of annealing on the distribution of indium in the surface region of In-alloyed GaAs crystals. Auger, secondary ion mass spectroscopy, and photoluminescence were used as the analytical tools. It is shown that In migrates and piles up over a depth of several tens or a few hundreds of angstroms from the surface leaving behind an In-depleted region. The In redistribution results in modifications of the band gap in the surface region of annealed GaAs:In substrates; these modifications take place even at temperatures as low as 400 °C.
ACCESSION #
9821772

 

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