Formation of p-type GaAs layers using Mg+ implantation and capless rapid thermal annealing

Masum Choudhury, A. N. M.; Armiento, C. A.
December 1986
Applied Physics Letters;12/29/1986, Vol. 49 Issue 26, p1787
Academic Journal
The enhanced overpressure proximity technique has been applied to the formation of p-GaAs layers using capless rapid thermal annealing of GaAs implanted with Mg+. Carrier concentrations in excess of 1×1019 cm-3 and excellent hole mobilities have been achieved without a dielectric encapsulant using this annealing method. Implants were performed at 200 or 320 keV with doses of 1×1014 cm-2 or 1×1015 cm-2. Hall measurements have yielded electrical activations as high as 86% and 38% for the low and high dose samples, respectively. Capacitance-voltage measurements on implanted samples indicate that this annealing technique can be used to control the doping profile for use in the fabrication of devices requiring p-n junctions.


Related Articles

  • The effect of substrate orientation on the properties of low temperature molecular beam epitaxial... O'Hagan, S.; Missous, M. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2400 

    Focuses on the results of comparative studies of low temperature growth of gallium arsenide on (100) substrates and on (111)A, (111)B, (311)A, and (311)B surfaces. Reduction of excess As incorporation into layers; Lattice parameter and lower absorption in the near-band-edge; Electrical...

  • Electromodulation reflectance of low temperature grown GaAs. Hsu, T.M.; Sung, J.W.; Lee, W. C. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2603 

    Studies low temperature grown gallium arsenide by electromodulation reflectance spectroscopy. Reflectance spectra; Arsenic antisite defects; Absence of a signal for a rich defect sample.

  • Hole mobilities and the effective Hall factor in p-type GaAs. Wenzel, M.; Irmer, G. // Journal of Applied Physics;6/15/1997, Vol. 81 Issue 12, p7810 

    Presents evidences proving effective Hall factor in p-type gallium arsenide as larger than values reported. Theoretical drift and theoretical Hall mobilities as functions of temperature; Theoretical Hall factors in the heavy and light hole bands; Strong dependence of the Hall mobility on Hall...

  • Growth kinetics of molecular beam epitaxially grown GaAs/Al0.3Ga0.7As (100) normal and inverted interfaces in thin single quantum well structures examined via photoluminescence studies. Voillot, F.; Madhukar, A.; Tang, W. C.; Thomsen, M.; Kim, J. Y.; Chen, P. // Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p194 

    The role of the relative surface kinetics of Ga and Al in determining the nature of normal and inverted interfaces defining GaAs/Al0.3Ga0.7As thin single quantum well (SQW) structures is examined via photoluminescence and excitation spectra studies on SQW structures grown under conditions...

  • Growth and transport properties of InAs epilayers on GaAs. Kalem, Seref; Chyi, Jen-Inn; Morkoç, Hadis; Bean, Ross; Zanio, Ken // Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1647 

    A series of InAs epitaxial layers with thicknesses ranging from 0.5 up to 6.2 μm was grown on (100) oriented semi-insulating GaAs substrates by molecular beam epitaxy. The transport properties of the layers have been investigated by Hall effect measurements down to 10 K. The properties of the...

  • Stacking fault effects in pure and n-type doped GaAs. Schmidt, T. M.; Justo, J. F.; Fazzio, A. // Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p907 

    Using ab initio total-energy calculations, we investigate the effects of stacking faults on the properties of dopants in pure and n-type doped GaAs. We find that the Si impurity segregates towards a GaAs stacking fault. A Si atom at a Ga site in the stacking fault, in either a neutral or a...

  • GaAs market expected to grow.  // Solid State Technology;May97, Vol. 40 Issue 5, p26 

    Reports that the worldwide market for gallium arsenide semiconductors is expected to grow 15 percent annually over 1997-2000.

  • INDUSTRY WATCH.  // Test & Measurement World;Aug2000, Vol. 20 Issue 10, p6 

    Reports on study conducted by Information Network on the growth of the global market for gallium arsenide by 2004. Contributions of cellular phones to the growth of the market; Market share of the United States.

  • Editorial. Min, Mart // Estonian Journal of Engineering;Mar2010, Vol. 16 Issue 1, p3 

    An introduction to the journal is presented in which the editor discusses a paper on the technologies for gallium arsenide (GaAs) powder diode structures, a description of high-level decision diagrams to represent digital electronic systems and articles on biomedical physics and technology.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics