TITLE

Formation of p-type GaAs layers using Mg+ implantation and capless rapid thermal annealing

AUTHOR(S)
Masum Choudhury, A. N. M.; Armiento, C. A.
PUB. DATE
December 1986
SOURCE
Applied Physics Letters;12/29/1986, Vol. 49 Issue 26, p1787
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The enhanced overpressure proximity technique has been applied to the formation of p-GaAs layers using capless rapid thermal annealing of GaAs implanted with Mg+. Carrier concentrations in excess of 1×1019 cm-3 and excellent hole mobilities have been achieved without a dielectric encapsulant using this annealing method. Implants were performed at 200 or 320 keV with doses of 1×1014 cm-2 or 1×1015 cm-2. Hall measurements have yielded electrical activations as high as 86% and 38% for the low and high dose samples, respectively. Capacitance-voltage measurements on implanted samples indicate that this annealing technique can be used to control the doping profile for use in the fabrication of devices requiring p-n junctions.
ACCESSION #
9821766

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics