Deep level transient spectroscopy signature analysis of DX centers in AlGaAs and GaAsP

Criado, J.; Gomez, A.; Muñoz, E.; Calleja, E.
December 1986
Applied Physics Letters;12/29/1986, Vol. 49 Issue 26, p1790
Academic Journal
The characterization of deep levels generated by donor dopants (DX centers) requires reliable deep level transient spectroscopy (DLTS) data. Because in AlGaAs and GaAsP the electron thermal emission from DX centers produces strong nonexponential capacitance transients, blind DLTS analysis may lead to erroneous trap parameter determinations. In this work the DLTS sampling conditions to be used for proper DX center characterization are examined. It is concluded that, only under constant tb/ta windowing ratios, self-consistent trap parameters are obtained.


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